• Microelectronics
  • Vol. 51, Issue 4, 557 (2021)
GAO Hengbin1, SUN Yabin1, HU Shaojian2, SHANG Enming2, LIU Yun1, LI Xiaojin1, and SHI Yanling1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.200530 Cite this Article
    GAO Hengbin, SUN Yabin, HU Shaojian, SHANG Enming, LIU Yun, LI Xiaojin, SHI Yanling. 3 nm GAAFET RF Small Signal Equivalent Circuit Model[J]. Microelectronics, 2021, 51(4): 557 Copy Citation Text show less
    References

    [1] LOUBET N,HOOK T,MONTANINI P,et al. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET [C] // Symp VLSI Technol. Kyoto, Japan. 2017: 230-231.

    [2] JANG D,YAKIMETS D,ENEMAN G,et al. Device exploration of nanosheet transistors for sub-7-nm technology node [J]. IEEE Trans Elec Dev, 2017, 64(6): 2707-2713.

    [3] SHARMA D, VISHVAKARMA S K. Analyses of DC and analog/RF performances for short channel quadruple-gate gate-all-around MOSFET [J]. Microelec J, 2015, 46(8): 731-739.

    [4] CRUPI G, SCHREURS D, RASKIN J P, et al. A comprehensive review on microwave FinFET modeling for progressing beyond the state of art [J]. Sol Sta Elec, 2013, 80: 81-95.

    [5] DESCHRIJVER D, AVOLIO G, SCHREURS D, et al. Microwave small-signal modelling of FinFETs using multi-parameter rational fitting method [J]. Elec Lett, 2011, 47(19): 1084-1086.

    [6] CRUPI G, SCHREURS D, PARVAIS B, et al. Scalable and multibias high frequency modeling of multi-fin fets [J]. Sol Sta Elec, 2006, 50(11-12): 1780-1786.

    [7] JUNG J, LEE J. Extraction of substrate resistance in bulk FinFETs through RF modeling [J]. IEEE Microwave & Wireless Compon Lett, 2007, 17(5): 358-360.

    [8] CHALKIADAKI M, ENZ C C. RF small-signal and noise modeling including parameter extraction of nanoscale MOSFET from weak to strong inversion [J]. IEEE Trans Microwave Theo & Techniq, 2015, 63(7): 2173-2184.

    [9] CAO Y, ZHANG W, FU J, et al. A complete small-signal MOSFET model and parameter extraction technique for millimeter wave applications [J]. IEEE J Elec Dev Soc, 2019, 7: 398-403.

    [10] BAUM G, BENEKING H. Drift velocity saturation in MOS transistors [J]. IEEE Trans Elec Dev, 1970, 17(6): 481-482.

    GAO Hengbin, SUN Yabin, HU Shaojian, SHANG Enming, LIU Yun, LI Xiaojin, SHI Yanling. 3 nm GAAFET RF Small Signal Equivalent Circuit Model[J]. Microelectronics, 2021, 51(4): 557
    Download Citation