A nanosecond pulse laser was used to scan and etch single crystal silicon in room temperature and atmospheric pressure environment in this work, and various black silicon samples with different structure were prepared by changing the scanning mode and scanning line spacing. Then the effects of scanning mode, scanning interval and high temperature oxygen blowing annealing time on the photoluminescence (PL) properties of black silicon were studied, as well as the effect of different microstructure of silicon surface on light absorption rate. The morphology, light absorption and PL characteristics of the prepared black silicon samples were detected and characterized using transmission electron microscopy, scanning electron microscopy, optical microscopy, Raman and fluorescence spectroscopy, absorption spectroscopy, etc., and black silicon structure samples with an absorption rate higher than 90% were obtained. It is found that the PL spectrum of black silicon samples prepared by linear scanning is mainly distributed in the red band, while the PL spectrum of black silicon samples prepared by orthogonal scanning has a stable emission peak near 900 nm. In addition, the eletron localized luminescence near 630 nm was observed on the black silicon sample, and its luminescence mechanism was explained by establishing a corresponding physical model.