Ke WANG, Zilin WANG, Xiaoyu ZHOU, Weiqi HUANG, Tiemin ZHANG, Hongyan PENG, Anchen WANG, Xi ZHANG, Zhongmei HUANG, Shirong LIU. Preparation of black silicon by nanosecond pulsed laser and its optical properties[J]. Chinese Journal of Quantum Electronics, 2024, 41(5): 813
- Chinese Journal of Quantum Electronics
- Vol. 41, Issue 5, 813 (2024)
Fig. 1. Optical microscope topography of black silicon samples obtained with various preparation parameters. Scan line spacing are 180 μm (a), 100 μm (b), 4 μm (c), respectivly; Orthogonal scanning: Scan line spacing are 180 μm (d), 100 μm (e), 4 μm (f), respectively
Fig. 2. Sectional SEM image of black silicon sample
Fig. 3. Silicon surface reflection spectra with different scanning spacing by orthogonal scanning
Fig. 4. PL spectra of black silicon prepared by line scanning before and after step oxygen blowing annealing
Fig. 5. (a) PL spectra of black silicon prepared by orthogonal scanning before and after step oxygen blowing annealing;(b) TEM image of black silicon quantum dots prepared by orthogonal scanning method
Fig. 6. Local state emission of black silicon at 630 nm. (a) PL spectra; (b) Physical model
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20