[1] Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. Journal of Applied Physics,2009,105(9):091101-44.
[2] Rogalski A. New material systems for third generation infrared detectors[J]. SPIE,2009,7388:73880J-1.
[3] Stoltz A J, Benson J D, Smith P J. Morphology of inductively coupled plasma processed HgCdTe surfaces[J]. J. Electron. Mater.,2008,37(9):122511230.
[4] Smith E P G, Patten E A, Goetz P M, et al. Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors[J]. J. Electron. Mater.,2006,35(6):11451152.
[5] Smith E P G, Venzor G M, Petraitis Y, et al. Fabrication and characterization of small unit-cell molecular beam epitaxy grown HgCdTe-on-Si mid-wavelength infrared detectors[J]. J. Electron. Mater.,2007,36(8):10451051.
[6] Park B A, Musca C A, Antoszewski J, et al. Effect of high-density plasma process parameters on carrier transport properties in p -to- n type converted Hg0.7Cd0.3Te layer[J]. J. Electron. Mater.,2007,36(8):913918.
[7] Baylet J, Ballet P, Castelein P, et al. TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-εm pitch and spatial coherence[J]. J. Electron. Mater.,2006,35(6):11531158.
[8] Nguyen T, Musca C A, Dell J M, et al. Dark Currents in long wavelength infrared HgCdTe gated photodiodes[J]. J. Electron. Mater.,2004,33(6):621629.