[1] Pickel J C, Kalma A H, Hopkinson G R, Marshall C J. Radiation effects on photonic imagers-A historical perspective[J]. IEEE Trans. Nucl. Sci.2003,50:671-688.
[4] Gopal V, Gupta S, Bhan R K, et al. Modeling of dark characteristics of mercury cadmium telluride n+p junctions[J]. Infrared Physics & Technology,2003,44:143-152.
[5] Nguyen T H, Musca C A, Dell J M, et al. The effects of vacuum baking on the I-V characteristics of LWIR HgCdTe photodiodes[J]. Proceedings of SPIE,2004,5274:433-441.
[8] Willardson R K, Beer A C. Semiconductors and Semimetals. Vol.18[M]. New York: Academic Press, 1981,201.
[9] Nemirovsky Y, Unikovsky A.Tunneling and 1/f noise currents in HgCdTe photodiodes[J]. J.Vac.Sci.Technol. B.1992,10(40):1602-1610.
[10] Rais M H, Musca C A, Antoszewski J, et al. Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion[J]. J.Crystal Growth,2000,214/215:1106-1110.
[11] QUAN Z J, LI Z F, HU W D, et al. Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode[J]. Journal of Applied Physics.2006,100:084503
