The distributed feedback (DFB) laser, featured in its stability and single-mode emission, is widely used in various domains such as pumping lasers and optical communications. As a key component in the DFB laser, the grating plays an important role in laser performance. The design and fabrication of the grating for the 976 nm DFB semiconductor laser are presented. The experiment starts with the optimization of the grating structure parameters based on the coupled mode theory. The gratings are fabricated through laser interference lithography and inductively coupled plasma (ICP) etching technique. The pattern quality of the fabricated grating is improved by the introduction of surface coating SiO2, and the fidelity of grating pattern transfer from photoresist to substrate is improved as well. Influence of exposure time and ICP etching time on grating surface morphology is investigated. The experiments show that the fabricated grating has uniformly distributed fringes and better surface morphology, and the expected design is realized.