• Frontiers of Optoelectronics
  • Vol. 4, Issue 4, 364 (2011)
Zhongwei SHI, Lirong HUANG*, Yi YU, Peng TIAN, and Hanchao WANG
Author Affiliations
  • Wuhan National Laboratory for Optoelectronics, College of Optoelectonic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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    DOI: 10.1007/s12200-011-0180-7 Cite this Article
    Zhongwei SHI, Lirong HUANG, Yi YU, Peng TIAN, Hanchao WANG. Influence of V/III ratio on QD size distribution[J]. Frontiers of Optoelectronics, 2011, 4(4): 364 Copy Citation Text show less
    References

    [1] Kong L, Feng Z C, Wu Z Y, Lu W J. Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure. Journal of Applied Physics, 2009, 106(1): 013512

    [2] Zhou D, Sharma G, Thomassen S F, Reenaas T W, Fimland B O. Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy. Applied Physics Letters, 2010, 96(6): 061913

    [3] Fei S P, Shi Z W, Huang L R. InAs/GaAs quantum dots grown on different GaAs substrates with graded InxGa1-xAs strain-reducing layer. Frontiers of Optoelectronics in China, 2010, 3(3): 241-244

    [4] Jung S I, Yeo H Y, Yun I, Leem J Y, Han I K, Kim J S, Lee J I. Size distribution effects on self-assembled InAs quantum dots. Journal of Materials Science Materials in Electronics, 2007, 18(S1): 191-194

    [5] Jung S I, Yeo H Y, Yun I, Leem J Y, Han I K, Kim J S, Lee J I. Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots. Physica E, Low-Dimensional Systems and Nanostructures, 2006, 33(1): 280-283

    [6] Arciprete F, Fanfoni M, Patella F, Della Pia A, Balzarotti A. Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001). Physical Review B: Condensed Matter and Materials Physics, 2010, 81(16): 165306

    [7] Kim G S, Jeon S M, Cho M Y, Choi H Y, Kim D Y, Kim M S, Kwon Y S, Choe J W, Kim J S, Leem J Y. Influence of InAs coverage on transition of size distribution and optical properties of InAs quantum dots. Acta Physica Polonica A, 2010, 118(4): 673-676

    [8] Hoglund L, Petrini E, Asplund C, Malm H, Andersson J Y, Holtz P O. Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy. Applied Surface Science, 2006, 15(252): 5525-5529

    [9] Li L, Liu G J, Li Z G, Li M,Wang X H. Growth and characterization of InAs quantum dots with low-denstity and long emission wavelength. Chinese Optics Letters, 2008, 6(1): 71-73

    [10] Anantathanasarn S, Notzel R, van Veldhoven P J, van Otten FWM, Eijkemans T J, Trampert A, Satpati B, Wolter J H. Wavelengthtunable (1.55-μm region) InAs quantum dots in InGaAsP/InP(100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 2005, 98(1): 013503-013509

    Zhongwei SHI, Lirong HUANG, Yi YU, Peng TIAN, Hanchao WANG. Influence of V/III ratio on QD size distribution[J]. Frontiers of Optoelectronics, 2011, 4(4): 364
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