• Frontiers of Optoelectronics
  • Vol. 4, Issue 4, 364 (2011)
Zhongwei SHI, Lirong HUANG*, Yi YU, Peng TIAN, and Hanchao WANG
Author Affiliations
  • Wuhan National Laboratory for Optoelectronics, College of Optoelectonic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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    DOI: 10.1007/s12200-011-0180-7 Cite this Article
    Zhongwei SHI, Lirong HUANG, Yi YU, Peng TIAN, Hanchao WANG. Influence of V/III ratio on QD size distribution[J]. Frontiers of Optoelectronics, 2011, 4(4): 364 Copy Citation Text show less

    Abstract

    The influence of V/III ratio on the formation of quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) is investigated by atomic force microscopy (AFM) and photoluminescence (PL) measurements. As V/III ratio increases, the density of QDs decreases accompanied by the transition of QD size distribution from bimodal (at V/III = 9) to single-modal (at V/III = 15), and then to bimodal (at V/III = 25) again, which is attributed to the change of the indium-species migration length at different V/III ratios. There are PL spectrum redshifts and the PL peak intensity decreases as V/III ratio increases.
    Zhongwei SHI, Lirong HUANG, Yi YU, Peng TIAN, Hanchao WANG. Influence of V/III ratio on QD size distribution[J]. Frontiers of Optoelectronics, 2011, 4(4): 364
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