• High Power Laser and Particle Beams
  • Vol. 34, Issue 6, 063003 (2022)
Zhitong Cui*, Wei Chen, Yayun Dong, Xin Nie, Wei Wu, and Zheng Liu
Author Affiliations
  • State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
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    DOI: 10.11884/HPLPB202234.210499 Cite this Article
    Zhitong Cui, Wei Chen, Yayun Dong, Xin Nie, Wei Wu, Zheng Liu. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34(6): 063003 Copy Citation Text show less
    Circuit model of CS115 injected on the single wire
    Fig. 1. Circuit model of CS115 injected on the single wire
    Circuit model of CS115 injected on wire bundles
    Fig. 2. Circuit model of CS115 injected on wire bundles
    Circuit model of CS115 injected on coaxial cable
    Fig. 3. Circuit model of CS115 injected on coaxial cable
    Simulated voltage across the terminal load (VTC)with different height of the wire
    Fig. 4. Simulated voltage across the terminal load (VTC)with different height of the wire
    Simulated voltage across the terminal load (VTC)with different length of the wire
    Fig. 5. Simulated voltage across the terminal load (VTC)with different length of the wire
    Simulated normalized voltage across the terminal load (VTC) with different values
    Fig. 6. Simulated normalized voltage across the terminal load (VTC) with different values
    Simulated voltage across the terminal load (VTC)with different injected point of the wire
    Fig. 7. Simulated voltage across the terminal load (VTC)with different injected point of the wire
    Simulated normalized voltage across the terminal load (VTC) with different values of the series resistance between the impulse generator and injection probe
    Fig. 8. Simulated normalized voltage across the terminal load (VTC) with different values of the series resistance between the impulse generator and injection probe
    Simulated voltage across the terminal load (VTC) with different number of wires
    Fig. 9. Simulated voltage across the terminal load (VTC) with different number of wires
    Simulated voltage across the terminal load of the inner conductor (VTI) with different height of the coaxial cable
    Fig. 10. Simulated voltage across the terminal load of the inner conductor (VTI) with different height of the coaxial cable
    Simulated voltage across the terminal load of the inner conductor (VTI) with different length of the coaxial cable
    Fig. 11. Simulated voltage across the terminal load of the inner conductor (VTI) with different length of the coaxial cable
    Simulated voltage across the terminal load of the inner conductor (VTI) with different load impedance of the shield
    Fig. 12. Simulated voltage across the terminal load of the inner conductor (VTI) with different load impedance of the shield
    Simulated voltage across the terminal load of the inner conductor (VTI) with different transfer impedance
    Fig. 13. Simulated voltage across the terminal load of the inner conductor (VTI) with different transfer impedance
    lw/m rise time/ns
    Dinj=0.75lwDinj=0.5lwDinj=0.25lwDinj=0.125lw
    0.55677
    1.010121313
    1.513162020
    Table 1. Rise time of coupling voltage with different length and injected point of the wire
    cableRdc/mΩ Lt/nH
    RG-5814.21.00
    RG-30314.10.43
    RG-2226.60.92
    RG-31626.80.88
    RG-10817.64.60
    Table 2. Transfer impedance of different coaxial cables
    Zhitong Cui, Wei Chen, Yayun Dong, Xin Nie, Wei Wu, Zheng Liu. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34(6): 063003
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