• Laser & Optoelectronics Progress
  • Vol. 53, Issue 1, 11404 (2016)
Yang Yang1、2、*, Yu Guolei1、2, Li Peixu2, Xia Wei2, and Xu Xiangang1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop53.011404 Cite this Article Set citation alerts
    Yang Yang, Yu Guolei, Li Peixu, Xia Wei, Xu Xiangang. Measurement and Analysis of Junction Temperature of Semiconductor Laser Devices[J]. Laser & Optoelectronics Progress, 2016, 53(1): 11404 Copy Citation Text show less

    Abstract

    Junction temperature/thermal- resistance is reflected in the comprehensive cooling capacity of laser devices, which is closely related to the sintering quality of the solder layer. The operating junction temperatures of laser devices have been detected by the forward-voltage and wavelength-shift methods. The distribution of voids in the solder layer have been analyzed using a scanning acoustic microscope. The results verify the feasibility of junction temperature measurement, and confirm the relation between the junction temperature and the sintering quality of laser chips. These results will pave the way for the development of semiconductor lasers and the filtering of laser devices.
    Yang Yang, Yu Guolei, Li Peixu, Xia Wei, Xu Xiangang. Measurement and Analysis of Junction Temperature of Semiconductor Laser Devices[J]. Laser & Optoelectronics Progress, 2016, 53(1): 11404
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