• Photonics Insights
  • Vol. 2, Issue 4, R08 (2023)
Jian Luo1、2、†, Qile Wu1, Lin Zhou1、*, Weixi Lu1, Wenxing Yang2, and Jia Zhu1、*
Author Affiliations
  • 1National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, Nanjing University, Nanjing, China
  • 2School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, China
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    DOI: 10.3788/PI.2023.R08 Cite this Article Set citation alerts
    Jian Luo, Qile Wu, Lin Zhou, Weixi Lu, Wenxing Yang, Jia Zhu. Plasmon-induced hot carrier dynamics and utilization[J]. Photonics Insights, 2023, 2(4): R08 Copy Citation Text show less

    Abstract

    Plasmonics has aroused tremendous interest in photophysics, nanophotonics, and metamaterials. The extreme field concentration of plasmonics offers the ultimate spatial and temporal light control, single-particle detection, and optical modulation. Plasmon decay of metal nanostructures into hot carriers extends the application into photocatalysis, photodetectors, photovoltaics, and ultrafast nanooptics. The generated hot electron–hole pairs are transferred into adjacent dielectrics, well known to be more efficient than the hot carrier generation in dielectrics by direct photoexcitations. However, plasmon-induced hot-carrier-based devices are far from practical applications due to the low quantum yield of hot carrier extraction. Emergent challenges include low hot carrier generation efficiency in metals, rapid energy loss of hot carriers, and severe charge recombination at the metal/dielectric interface. In this review, we provide a fundamental insight into the hot carrier generation, transport, injection, and diffusion into dielectrics based on the steady-state and time-resolved spectroscopic studies as well as theoretical calculations. Strategies to enhance hot carrier generation in metals and electron transfer into dielectrics are discussed in detail. Then, applications based on hot carrier transfer are introduced briefly. Finally, we provide our suggestions on future research endeavors. We believe this review will provide a valuable overall physical picture of plasmon-induced hot carrier applications for researchers.
    ɛbulk(ω)=1ωp2ω2+iωγb,

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    ɛ1bulk(ω)=1ωp2ω2+γb2,(2a)

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    ɛ2bulk(ω)=γbωp2ω(ω2+γb2).(2b)

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    ɛbulk(ω)=ɛib(ω)+1ωp2ω2+iωγb,(3a)

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    ɛ1bulk(ω)=ɛ1ib(ω)+1ωp2ω2+γb2,(3b)

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    ɛ2bulk(ω)=ɛ2ib(ω)+γbωp2ω(ω2+γb2).(3c)

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    ɛ(ω)=ɛωp2ω2+iωγb+i=1kfiω12ωi2ω2iωγi,

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    γ=γb+γsurf+γrad.

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    ɛ1(ω)ɛ1ib(ω)+1ωp2ω2=ɛ1bulk(ω),(6a)

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    ɛ2(ω)ɛ2ib(ω)+ωp2ω3(γb+γsurf)=ɛ2bulk(ω)+ωp2ω3×AvFleff.(6b)

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    1T2=12T1+1T2*=Γ2ℏ︀,

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    σext=πD22x2n=1(2n+1)Re[an+bn],(8a)

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    σsca=πD22x2n=1(2n+1){|an|2+|bn|2},(8b)

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    σabs=σextσsca,(8c)

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    an=ψn(mx)ψn(x)mψn(mx)ψn(x)ψn(mx)ζn(x)mψn(mx)ζn(x),(9a)

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    bn=mψn(mx)ψn(x)ψn(mx)ψn(x)mψn(mx)ζn(x)ψn(mx)ζn(x),(9b)

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    Γabℏ︀=2ɛ2(ɛ1ω)2+(ɛ2ω)2.

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    Γabsℏ︀=2ɛ2|ɛ1/ω|.

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    Γabsℏ︀=γb+AvFleff.

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    Γℏ︀=γb+AvFleff+2κV.

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    Γ=Γb+Γsurf+Γrad.

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    Epl(t)t1ω0K(t*)eγ(tt*)sin[ω0(tt*)]dt*,

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    I(Δt)+|Epl(t)|2Ndt,

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    γnr=γb+γsurf=γe-e+γe-ph+γe-def+γsurf,

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    Jian Luo, Qile Wu, Lin Zhou, Weixi Lu, Wenxing Yang, Jia Zhu. Plasmon-induced hot carrier dynamics and utilization[J]. Photonics Insights, 2023, 2(4): R08
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