Coupled-ridge waveguide quantum cascade laser array lasing at λ ~ 5 &#181;m

Pengchang Yang; Jinchuan Zhang; Zenghui Gu; Chuanwei Liu; Yue Zhao; Fengmin Cheng; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Lijun Wang; Shuman Liu; Fengqi Liu

doi:10.1088/1674-4926/42/9/092901

Journals >Journal of Semiconductors >Volume 42 >Issue 9 >Page 092901 > Article

Journal of Semiconductors
Vol. 42, Issue 9, 092901 (2021)

Coupled-ridge waveguide quantum cascade laser array lasing at λ ~ 5 µm

Pengchang Yang^1、2, Jinchuan Zhang², Zenghui Gu^2、3, Chuanwei Liu^2、3, Yue Zhao^2、3, Fengmin Cheng², Shenqiang Zhai², Ning Zhuo², Junqi Liu^2、3, Lijun Wang^2、3, Shuman Liu^2、3, and Fengqi Liu^2、3

Author Affiliations

¹School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

²Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China

³School of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/42/9/092901 Cite this Article

Pengchang Yang, Jinchuan Zhang, Zenghui Gu, Chuanwei Liu, Yue Zhao, Fengmin Cheng, Shenqiang Zhai, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Fengqi Liu. Coupled-ridge waveguide quantum cascade laser array lasing at λ ~ 5 µm[J]. Journal of Semiconductors, 2021, 42(9): 092901 Copy Citation Text

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Abstract

In this work, we demonstrated high-power quantum cascade laser (QCL) arrays lasing at λ ~ 5 µm by employing an optimized coupled-ridge waveguide (CRW) structure. Five-element QCL arrays were simulated and fabricated through a two-step etching method to extend the CRW structure to a mid-wave infrared regime. A lateral far-field with the main peak near a diffraction-limited intensity curve of about 10° was observed by properly designing a geometric shape of the ridges and interspaces. By introducing a buried 2nd-order distributed feedback (DFB) grating, substrate emission with a radiation power above 1 W at 25 °C is achieved. Single longitudinal mode operation is obtained by changing the temperature of the heatsink with a good linear wavelength tuning coefficient of –0.2 cm^–1/K.

$ S\,{{\sin}}\theta =\pm \left(k+\delta /2\pi \right) \lambda {,} $

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