Design of New Type Light-Emitting Triode Device and Simulation Research on Photoelectric Regulation Performance

Jingjing Chen; Shaokun Hao; Xiongtu Zhou; Chaoxing Wu; Yongai Zhang; Tailiang Guo; Jie Sun

doi:10.3788/LOP202259.1713001

[1] Fan Z Y, Lin J Y, Jiang H X. III-nitride micro-emitter arrays: development and applications[J]. Journal of Physics D: Applied Physics, 41, 094001(2008).

[2] Cai Y F, Zou X B, Liu C et al. Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters[J]. IEEE Electron Device Letters, 39, 224-227(2018).

[3] Li J M, Liu Z Q, Wei T B et al. Development summary of semiconductor lighting in China[J]. Acta Optica Sinica, 41, 0116002(2021).

[4] Paranjpe A, Montgomery J, LEE S M et al. Micro-LED displays: key manufacturing challenges and solutions[J]. SID International Symposium: Digest of Technology Papers, 49, 597-600(2018).

[5] McKendry J J D, Rae B R, Gong Z et al. Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses[J]. IEEE Photonics Technology Letters, 21, 811-813(2009).

[6] Hu Y M, Zhang D D, Zhang J H et al. Thermal stability of CdSe/ZnS quantum dot white light device[J]. Acta Optica Sinica, 40, 0823002(2020).

[7] Tan H Q, Zhao Y, Xu C et al. Enhancing luminescent properties of GaN-based LED and improving optical and electrical properties of GaN epitaxial wafers with excimer laser irradiation[J]. Chinese Journal of Lasers, 42, 1006004(2015).

[8] Bouhamri Z, Virey E. 46. 1: invited paper: MicroLED display technology trends and intellectual property landscape[J]. SID Symposium Digest of Technical Papers, 52, 559(2021).

[9] Zhang X F, Chen Y B. Design and implementation of P1.5 HD indoor LED full color display[J]. Mechanical & Electrical Engineering Technology, 50, 147-152(2021).

[10] Ji H L, Zhang P P, Chen N J et al. Micro-LED display: recent progress and future challenges[J]. Chinese Journal of Liquid Crystals and Displays, 36, 1101-1112(2021).

[11] Marion F, Bisotto S, Berger F et al. A room temperature flip-chip technology for high pixel count micro-displays and imaging arrays[C], 929-935(2016).

[12] Dai J, Yu B L, Yang L et al. Microstructure and mechanical properties of ultrasonically assisted brazing of dissimilar Cu-Al alloys[J]. Science of Advanced Materials, 12, 733-739(2020).

[13] Wu Y F, Keller B P, Keller S et al. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors[J]. Applied Physics Letters, 69, 1438-1440(1996).

[14] Lee Y J, Yang Z P, Chen P G et al. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors[J]. Optics Express, 22, A1589(2014).

[15] Chen F, Feng Q Y. AlGaN/GaN HEMTs with intrinsic GaN modulation layer between gate and source[J]. Semiconductor Technology, 46, 694-700(2021).

[16] Li T Y. Research progress of power electronic devices for SiC and GaN[J]. Microelectronics, 46, 685-689(2016).

[17] Yoshida S, Suzuki J. High-temperature reliability of GaN electronic devices[J]. MRS Proceedings, 595, F99W4.8(1999).

[18] Sun R G, Liu H Y. An inorganic LED display device[P].

[19] Li Z, Waldron J, Detchprohm T et al. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate[J]. Applied Physics Letters, 102, 192107(2013).

[20] Yan J B, Piao J L, Wang Y J. An enhancement mode MOSFET based on GaN-on-silicon platform for monolithic OEIC[J]. IEEE Electron Device Letters, 41, 76-79(2020).

[21] Hartensveld M. 61-5: fully monolithic GaN µLED display system[J]. SID Symposium Digest of Technical Papers, 52, 880-883(2021).

[22] Liu Z J, Huang T D, Ma J et al. Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD[J]. IEEE Electron Device Letters, 35, 330-332(2014).

[23] Lu X, Liu C, Jiang H X et al. High performance monolithically integrated GaN driving VMOSFET on LED[J]. IEEE Electron Device Letters, 38, 752-755(2017).

[24] Hartensveld M, Zhang J. Monolithic integration of GaN nanowire light-emitting diode with field effect transistor[J]. IEEE Electron Device Letters, 40, 427-430(2019).

[25] Wu J. Study and optimum of self-heating effects in GaN-HEMT device[D](2014).

[26] Zhao H P, Liu G Y, Zhang J et al. Analysis of internal quantum efficiency and current injection efficiency in Ⅲ-nitride light-emitting diodes[J]. Journal of Display Technology, 9, 212-225(2013).