Micro-light-emitting diodes (Micro-LEDs) offer many unique advantages in materials, devices, technologies, and process applications. In the future, display devices will evolve in the direction of multi-functional integration, such as lighting, swiching, and sensing, Micro-LEDs often require low-current-density driving, and the driving mode faces considerable challenges. To modulate LED devices with a low current input, herein, we propose a new type multifunctional integrated light-emitting triode device that integrates light emission and regulation functions, based on the same GaN material used in LEDs and process platform. The device shows a vertically integrated structure comprising bipolar transistors and LEDs. The number of electrons moving to the light-emitting active layer can be controlled by changing the base voltage, and the luminous effect of the device is simultaneously adjusted. Based on the current gain effect of bipolar junction transistor (BJT), the input current under the same light effect can be reduced from the milliampere to the microampere level and a highly linear regulation is achieved within a certain voltage range. The device can be controlled and driven using low-power signals and is expected to become a revolutionary technology for high-density and high-integration smart displays.