Growth and Defects of LiGaO2Crystal Used for GaN Epitaxy

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 18 >Issue 4 >Page 499 > Article

Acta Optica Sinica
Vol. 18, Issue 4, 499 (1998)

Growth and Defects of LiGaO₂Crystal Used for GaN Epitaxy

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Defects of LiGaO₂Crystal Used for GaN Epitaxy[J]. Acta Optica Sinica, 1998, 18(4): 499 Copy Citation Text

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References

[1] S. Nakanura, M. Senoh, S. Nagahama et al.. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime. Appl. Phys. Lett., 1997, 70(7): 868～870

[2] F. A. Ponce, D. P. Bour, W. Gotz et al.. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1997, 68(7): 917～922

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Defects of LiGaO₂Crystal Used for GaN Epitaxy[J]. Acta Optica Sinica, 1998, 18(4): 499

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