The lattice mismatch between LiGaO 2 and GaN is only 0.2%, so LiGaO 2 is expected to be a promising substrate for the epitaxy of GaN. In present work, large LiGaO 2 single crystal (φ15×60 mm) with high quality has been grown using Czochralski method . The crystalline quality was characterized by means of chemical etching, optical microscope and TEM. The influences of growth parameters on LiGaO 2 crystal quality were invetigated. The growth rate along 〈100〉 is the most rapid, that along 〈001〉 is lowest. γ Ga 2O 3 inclusions tend to emerge in LiGaO 2 crystal owing to the volatilization of Li 2O, therefore, a lot of dislocations were induced, which form the subgrain boundary parallel to (001) plane. High quality LiGaO 2 crystal can be obtained by using the charge with excess Li 2O and adopting appropriate growth parameters.