• Photonics Research
  • Vol. 4, Issue 6, 222 (2016)
Yuriko Maegami*, Guangwei Cong, Morifumi Ohno, Makoto Okano, and Koji Yamada
Author Affiliations
  • National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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    DOI: 10.1364/PRJ.4.000222 Cite this Article Set citation alerts
    Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano, Koji Yamada. Strip-loaded waveguide-based optical phase shifter for high-efficiency silicon optical modulators[J]. Photonics Research, 2016, 4(6): 222 Copy Citation Text show less
    References

    [1] L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, M. Paniccia. 40  Gbit/s silicon optical modulator for high-speed applications. Electron. Lett., 43, 1196-1197(2007).

    [2] J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, Y. Arakawa. High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection. Jpn. J. Appl. Phys, 55, 04EC01(2016).

    [3] F. Gan, F. X. Kärtner. High-speed silicon electrooptic modulator design. IEEE Photon. Technol. Lett., 17, 1007-1009(2005).

    [4] G.-R. Zhou, M. W. Geis, S. J. Spector, F. Gan, M. E. Grein, R. T. Schulein, J. S. Orcutt, J. U. Yoon, D. M. Lennon, T. M. Lyszczarz, E. P. Ippen, F. X. Kärtner. Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators. Opt. Express, 16, 5218-5226(2008).

    [5] S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, T. Usuki. 12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode. Opt. Express, 20, 2911-2923(2012).

    [6] M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, A. L. Lentine. Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator. IEEE J. Sel. Top. Quantum Electron., 16, 159-164(2010).

    [7] D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, S. Laval. Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure. Opt. Express, 16, 334-339(2008).

    [8] N. N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, M. Asghari. High speed carrier-depletion modulators with 1.4  V-cm VπL integrated on 0.25  μm silicon-on-insulator waveguides. Opt. Express, 18, 7994-7999(2010).

    [9] K. Ogawa, K. Goi, Y. T. Tan, T.-Y. Liow, X. Tu, Q. Fang, G.-Q. Lo, D.-L. Kwong. Silicon Mach-Zehnder modulator of extinction ratio beyond 10  dB at 10.0–12.5  Gbps. Opt. Express, 19, B26-B31(2011).

    [10] G. Kim, J. W. Park, I. G. Kim, S. Kim, S. Kim, J. M. Lee, G. S. Park, J. Joo, K. S. Jang, J. H. Oh, S. A. Kim, J. H. Kim, J. Y. Lee, J. M. Park, D. W. Kim, D. K. Jeong, M. S. Hwang, J. K. Kim, K. S. Park, H. K. Chi, H. C. Kim, D. W. Kim, M. H. Cho. Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30  Gb/s. Opt. Express, 19, 26936-26947(2011).

    [11] T. Baehr-Jones, R. Ding, Y. Liu, A. Ayazi, T. Pinguet, N. C. Harris, M. Streshinsky, P. Lee, Y. Zhang, A. E.-J. Lim, T.-Y. Liow, S. H.-G. Teo, G.-Q. Lo, M. Hochberg. Ultralow drive voltage silicon traveling-wave modulator. Opt. Express, 20, 12014-12020(2012).

    [12] K. Goi, K. Oda, H. Kusaka, Y. Terada, K. Ogawa, T.-Y. Liow, X. Tu, G.-Q. Lo, D.-L. Kwong. 11-Gb/s 80-km transmission performance of zero-chirp silicon Mach-Zehnder modulator. Opt. Express, 20, B350-B356(2012).

    [13] D. Petousi, L. Zimmermann, K. Voigt, K. Petermann. Performance limits of depletion-type silicon Mach–Zehnder modulators for telecom applications. J. Lightwave Technol., 31, 3556-3562(2013).

    [14] H. Xu, X. Xiao, X. Li, Y. Hu, Z. Li, T. Chu, Y. Yu, J. Yu. High speed silicon Mach-Zehnder modulator based on interleaved PN junctions. Opt. Express, 20, 15093-15099(2012).

    [15] H. Yu, M. Pantouvaki, J. V. Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, W. Bogaerts. Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators. Opt. Express, 20, 12926-12938(2012).

    [16] G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S.-W. Chen, S. S. Hsu. Recent breakthroughs in carrier depletion based silicon optical modulators. Nanophotonics, 3, 229-245(2014).

    [17] .

    [18] Lumerical Solutions,.

    [19] Lumerical Solutions,.

    [20] K. Furuya, K. Nakanishi, R. Takei, E. Omoda, M. Suzuki, M. Okano, T. Kamei, M. Mori, Y. Sakakibara. Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material. Appl. Phys. Lett., 100, 251108(2012).

    [21] R. Takei, S. Manako, E. Omoda, Y. Sakakibara, M. Mori, T. Kame. Sub-1  dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect. Opt. Express, 22, 4779-4788(2014).

    Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano, Koji Yamada. Strip-loaded waveguide-based optical phase shifter for high-efficiency silicon optical modulators[J]. Photonics Research, 2016, 4(6): 222
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