High-power distributed feedback lasers based on InP corrugated sidewalls at λ∼2 μm

Yongqiang Sun; Yunfei Xu; Jinchuan Zhang; Fengmin Chen; Junqi Liu; Shuman Liu; Quanyong Lu; Ning Zhuo; Lijun Wang; Fengqi Liu; Shenqiang Zhai

doi:10.1364/PRJ.484520

Journals >Photonics Research >Volume 11 >Issue 8 >Page 1390 > Article

Photonics Research
Vol. 11, Issue 8, 1390 (2023)

High-power distributed feedback lasers based on InP corrugated sidewalls at

λ

∼2 μm | Editors' Pick

Yongqiang Sun^1,2,†, Yunfei Xu^1,2,†, Jinchuan Zhang^1,4,*, Fengmin Chen^1,5,*..., Junqi Liu^1,2, Shuman Liu^1,2, Quanyong Lu³, Ning Zhuo¹, Lijun Wang^1,2, Fengqi Liu^1,2 and Shenqiang Zhai^1,6,*|Show fewer author(s)

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Academy of Quantum Information Sciences, Beijing 100193, China

⁴e-mail: zhangjinchuan@semi.ac.cn

⁵e-mail: chengfm@semi.ac.cn

⁶e-mail: zsqlzsmbj@semi.ac.cn

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DOI: 10.1364/PRJ.484520 Cite this Article Set citation alerts

Yongqiang Sun, Yunfei Xu, Jinchuan Zhang, Fengmin Chen, Junqi Liu, Shuman Liu, Quanyong Lu, Ning Zhuo, Lijun Wang, Fengqi Liu, Shenqiang Zhai, "High-power distributed feedback lasers based on InP corrugated sidewalls at

λ

∼2 μm," Photonics Res. 11, 1390 (2023) Copy Citation Text

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Abstract

We report a high-power single-mode InP-based 2 μm distributed feedback (DFB) laser with a second-order buried grating and corrugated sidewalls. A second-order semiconductor grating is used for in-plane feedback and vertical out-coupling. The corrugated sidewalls are used to eliminate higher-order transverse modes. For the DFB laser with a 2 mm long cavity and 15 μm wide ridge, the maximum continuous-wave edge-emitting and surface-emitting single-mode powers at 300 K are up to 81 and 42 mW, respectively. A single-lobed far-field radiation pattern with a low divergence angle of approximately 8.6° is achieved by a device with a ridge width of 15 μm. The single-longitudinal-mode emission wavelength of the fabricated laser can be adjusted from 2003.8 nm at 288 K to 2006.9 nm at 313 K without any mode hopping. Robust single-mode emission with a side-mode suppression ratio of 30 dB is achieved under all injection currents and temperature conditions.