[1] Bimberg D.Quantum dots:paradigm changes in semiconductor physics [J].Semiconductors,1999,33:951-955.
[2] Grundmann M,Ledentsov N N,et al.Semiconductor quantum dots for application in diode lasers [J].Thin Solid Films,1998,318:83-87.
[3] Marsh J H,Bhattacharyya D,Helmy A S,et al.Engineering quantum-dot lasers [J].Physica E8,2000,154-163.
[4] Guo L J,Chou S Y.Stacked quantum dot transistor and charge-induced confinement enhancement [J].Electron.Lett.,1998,34(10):1030-1031.
[5] Bimberg D,Grundmann M,Heinrichsdorff F,et al.Quantum dot lasers:breakthrough in optoelectronics [J].Thin Solid Films,2000,367:235-249.
[6] Kazama H,Katano Y.A quantum dot FET-a future playground of quantum state manipulation [C] ∥ Device Research Conference,2001,93-94.
[7] Huang C J,Zhu X P,Li C,et al.Nanofabrication of grid-patterned substrate by holographic lithography [J].J.of Crystal Growth,2002,236:141-144.
[8] Chyi Jen Inn.MBE growth and characterisation of InGaAs quantum dot lasers [J].Materials Science and Engineering,2000,B75:121-125.
[9] Joyce B A.Fundamental growth processes in the molecular beam epitaxy of Ⅲ-Ⅴ compounds-an historical perspective [J].Thin Solid Films,2000,367:3-5.
[10] Moench W.Semiconductor Surface and Interfaces [M].Springer-Verlag,1993.30-135.
[11] Scott C G,Reed C E.Surface Physics of Phosphors and Semiconductors [M].Academic Press,1975.96-219.
[12] Chang L L,Ploog K.Molecular Beam Epitaxy and Heterostructures [M].Martinus Nijhoff Publishers,1985.297-328.
[13] Brus L E.A simple model for the ionization potential,electron affinity,and aqueous redox potentials of small semiconductor crystallites [J].J.Chem.Phys.,1983,79(11):5566-5571.
[14] Kroemer H.Heterostructure devices:a device physicist looks at interfaces [J].Surface Science,1983,132:543-576.
[15] Brus L.Zero-dimensional "Excitons" in semiconductor clusters [J].IEEE J.Quan.Electr.,1986,22(9):1909-1914.
[16] Capasso F.Compositionally graded semiconductors and their device applications [J].Ann.Rev.Mater.Sci.,1986,16:263-291.
[17] Lay G L,Derrien J,Boccara N.Semiconductor Interface:Formation and Properties [M].Springer-Verlag Press,1987.340-349.
[18] Price P J,Stern F.Surface Science [M].1987.132:577.
[20] Ghatak A K,et al.Accurate solutions to Schrodinger's equation using modified airy functions [J].IEEE J.Quan.Electron.,1992,28(2):400-403.
[21] Shur M.Physics of Semiconductor Devices [M].Englewood Cliffs,Prentice Hall Press,625.