Interface effects on energy levels in semiconductor quantum dot heterostructures

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 21 >Issue 5 >Page 669 > Article

Chinese Journal of Quantum Electronics
Vol. 21, Issue 5, 669 (2004)

Interface effects on energy levels in semiconductor quantum dot heterostructures

[in Chinese]^*, [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Interface effects on energy levels in semiconductor quantum dot heterostructures[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 669 Copy Citation Text

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Abstract

Based on a spherical shell structure and the graded finite potential well model, the interface effects on the energy level shifts of bound states in a semiconductor quantum dot heterostructure were analyzed and calculated. It indicates that the interface effects are fairly significant when the quantum dots are in the strong confinement region.

Keywords

Airy function method graded potential well interface effects optoelectronics quantum dot heterostructures

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Interface effects on energy levels in semiconductor quantum dot heterostructures[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 669

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