[4] Orihara H, Ishibashi Y. A statistical theory of nucleation and growth in finite systems [J]. J. Phys. Soc. Japan,1992, 61(6): 1919-1925
[5] Ishibashi Y, Orihara H. Size effect in ferroelectric switching [J]. J. Phys. Soc. Japan, 1992, 61(12): 4650-4656
[6] Peuzin J C. Comment on domain inverse effects in Tr-LiNbO3 integrated optical device [J]. Appl. Phys. Lett.,1986, 148:1104-1108
[7] Kugel V D, Rosenman G. Domain inversion in heat-treated LiNbO3 crystal [J]. Appl. Phys. Lett., 1993, 62(23):2902-2907
[8] Dimmler K et al. Switching kinetics in KNOa ferroelectric thin-film memories [J]. J. Appl. Phys., 1987, 61(12):5467-5470
[9] Orihara H et al. Pattern evolution in polarization reversal of ferroelectric liquid crystal [J]. J. Phys. Soc. Jpn.,1988, 57(11): 4101-4105
[10] Ishibashi Y, Takagi Y. Note on ferroelectric domain switching [J]. J. Phys. Soc. Jpn., 1971, 31(2): 506-509
[11] Hase T, Shiosaki T. Preparation and switching kinetics of Pb (Zr, Ti) Oa thin films deposited by reactive sputtering [J]. Jpn. J. Appl. Phys., 1991, 30:2159-2162
[12] Duiker H M, Beale D. Grain-size effects in ferroelectric switching [J]. Phys. Rev., 1990, B41(1): 490-495
