• Chinese Journal of Quantum Electronics
  • Vol. 19, Issue 6, 541 (2002)
[in Chinese]1 and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese]. Fitting of KNO3 Ferroelectric Thin-film Switching Currents[J]. Chinese Journal of Quantum Electronics, 2002, 19(6): 541 Copy Citation Text show less

    Abstract

    The correlation function theory for ferroelectrics is employed to discuss the switching current and the ratio of domain inverted area to film area during domain inversion of a ferroelectric thin film. The theory is fitted to the KNOs experimental data. Fitting results indicate that theory taking into account the thickness of the ferroelectric thin film is better than the KA model.
    [in Chinese], [in Chinese]. Fitting of KNO3 Ferroelectric Thin-film Switching Currents[J]. Chinese Journal of Quantum Electronics, 2002, 19(6): 541
    Download Citation