Indium-doped perovskite-related cesium copper halide scintillator films for high-performance X-ray imaging

Rui Liu; Zhiyong Liu; Chengxu Lin; Guangda Niu; Xuning Zhang; Bo Sun; Tielin Shi; Guanglan Liao

doi:10.1364/PRJ.501477

Journals >Photonics Research >Volume 12 >Issue 2 >Page 369 > Article

Photonics Research
Vol. 12, Issue 2, 369 (2024)

Indium-doped perovskite-related cesium copper halide scintillator films for high-performance X-ray imaging

Rui Liu¹, Zhiyong Liu^1、*, Chengxu Lin¹, Guangda Niu², Xuning Zhang¹, Bo Sun³, Tielin Shi¹, and Guanglan Liao^1、4

Author Affiliations

¹State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

²Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

³School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

⁴e-mail: guanglan.liao@hust.edu.cn

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DOI: 10.1364/PRJ.501477 Cite this Article Set citation alerts

Rui Liu, Zhiyong Liu, Chengxu Lin, Guangda Niu, Xuning Zhang, Bo Sun, Tielin Shi, Guanglan Liao. Indium-doped perovskite-related cesium copper halide scintillator films for high-performance X-ray imaging[J]. Photonics Research, 2024, 12(2): 369 Copy Citation Text

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Characterization details of the Cs3Cu2I5:In powders. (a) XRD patterns of the Cs3Cu2I5 powders samples doped with different indium concentrations (top), compared with the orthorhombic Cs3Cu2I5 at the bottom (PDF#79-0333). (b) SEM image of the Cs3Cu2I5:In powders. (c) Elemental mapping images of the Cs3Cu2I5:2%In powders. (d) XPS survey spectrum of the Cs3Cu2I5:In powders. (e), (f) High-resolution XPS profiles of Cu (2p3/2 and 2p1/2) and In (3d5/2 and 3d3/2) of the Cs3Cu2I5 powders synthesized with and without In, respectively.

Fig. 1. Characterization details of the Cs3Cu2I5:In powders. (a) XRD patterns of the Cs3Cu2I5 powders samples doped with different indium concentrations (top), compared with the orthorhombic Cs3Cu2I5 at the bottom (PDF#79-0333). (b) SEM image of the Cs3Cu2I5:In powders. (c) Elemental mapping images of the Cs3Cu2I5:2%In powders. (d) XPS survey spectrum of the Cs3Cu2I5:In powders. (e), (f) High-resolution XPS profiles of Cu (2p3/2 and 2p1/2) and In (3d5/2 and 3d3/2) of the Cs3Cu2I5 powders synthesized with and without In, respectively.

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Ultraviolet detection performance of the Cs3Cu2I5:In films. (a) PL and PLE spectra of the Cs3Cu2I5:In films. (b) PL emission spectra of the Cs3Cu2I5 films doped with different indium concentrations. (c) Comparison of the PL spectra of the films before and after being soaked in deionized water for 1 h. (d) PL decay spectra of the Cs3Cu2I5 films with and without In+. (e) PLQY spectra of the Cs3Cu2I5:In films. (f) Configuration coordinate diagram of the photophysical dynamics in Cs3Cu2I5.

Fig. 2. Ultraviolet detection performance of the Cs3Cu2I5:In films. (a) PL and PLE spectra of the Cs3Cu2I5:In films. (b) PL emission spectra of the Cs3Cu2I5 films doped with different indium concentrations. (c) Comparison of the PL spectra of the films before and after being soaked in deionized water for 1 h. (d) PL decay spectra of the Cs3Cu2I5 films with and without In+. (e) PLQY spectra of the Cs3Cu2I5:In films. (f) Configuration coordinate diagram of the photophysical dynamics in Cs3Cu2I5.

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Fig. 3. X-ray detection performance of the Cs3Cu2I5:In powders. (a) X-ray absorption coefficients of the Cs3Cu2I5 film, the CsPbBr3 film, and commercial BGO scintillator as a function of photon energy. (b) RL spectra of the Cs3Cu2I5:0.4%In films, the undoped Cs3Cu2I5 films, and the BGO films (dose rate, 4.85 mGy/s; voltage, 50 kV). The size (1 cm×1 cm) and thickness (1 mm) of the films are the same. (c) Dose-rate-dependent RL spectra of the Cs3Cu2I5:In films. (d) Normalized RL intensity of Cs3Cu2I5:In films and BGO under 24 h continuous radiation irradiation with an X-ray dose rate of 7.5 m Gy/s. (e) Signal-to-noise ratio of X-ray response of the Cs3Cu2I5:In films at different irradiation dose rates. (f) MTF of the Cs3Cu2I5:In films, measured by the slanted-edge method.

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Fig. 4. Construction and application of a high-performance X-ray testing system. (a) Schematic diagram of the X-ray imaging system. (b) X-ray imaging of the Cs3Cu2I5:In films on the standard resolution card. (c) Photograph and X-ray image (dose rate, 963 μGy/s; tube voltage, 50 kV; beam current, 200 μA; exposure time, 10 s) of internal structure of the earphone; (d) internal circuitry of the microchip; (e) internal structure of the charger plug; (f) internal spring and filling of the pen.

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Materials	Light Yield [photons ${MeV}^{- 1}$ ]	Detection Limit [ $nGy s^{- 1}$ ]	Spatial Resolution [ $lp {mm}^{- 1}$ ]	Radiation Stability	Preparation Method	Reference
${CsPbBr}_{3}$	21,000	–	–	2 h (unchanged)	Hot injection	[23]
${CH}_{3} {NH}_{3} {PbBr}_{3}$	–	16	5.4	21 h ( $> 80 %$ )	Solution method	[55]
${TPP}_{2} {MnBr}_{4}$	78,000	8.8	15.7	–	Antisolvent method	[56]
${Rb}_{2} {CuBr}_{3}$	91,056	121.5	–	–	Cooling crystallization	[27]
${(C_{8} H_{20} N)}_{2} {MnBr}_{4}$	24,400	24.2	4.9	250 min ( $> 95 %$ )	Evaporation method	[32]
$K_{2} {CuBr}_{3}$	23,806	132.8	–	–	Solution method	[30]
${CsCu}_{2} I_{3}$	21,580	–	7.5	100 h (unchanged)	Cooling crystallization	[57]
${Cs}_{3} {Cu}_{2} I_{5}$	46,000	96.54	8.6	–	Solution method	[54]
${Cs}_{3} {Cu}_{2} I_{5} : Zn$	–	310	15.7	–	Hot injection	[42]
${Cs}_{2} {ZrCl}_{6}$	49,400	65	18	120 min ( $> 94 %$ )	Solution method	[49]
${Cs}_{2} {Ag}_{0.6} {Na}_{0.4} {In}_{1 - y} {Bi}_{y} {Cl}_{6}$	$39, 000 \pm 7000$	19	4.4	50 h (unchanged)	Hydrothermal method	[58]
${Cs}_{2} {Na}_{0.9} {Ag}_{0.1} {LuCl}_{6} : {Dy}^{3 +}$	8332	123.79	11.2	–	Hydrothermal method	[59]
${Cs}_{3} {Cu}_{2} I_{5} : In$	$\approx 53,400$	56.2	11.3	24 h ( $> 90 %$ )	Solution method	This work