• Journal of Semiconductors
  • Vol. 40, Issue 8, 081507 (2019)
Teng Jing1、2, Liu Nan1、2, and Li Yongqing1、2、3
Author Affiliations
  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Songshan Lake Materials Laboratory, Dongguan 523808, China
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    Abstract

    Topological insulators (TIs) host robust edge or surface states protected by time-reversal symmetry (TRS), which makes them prime candidates for applications in spintronic devices. A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional (3D) TI thin film and bulk materials with magnetic elements. This approach aims to break the TRS and open a surface band gap near the Dirac point. Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed, paving a way for applications in spintronics and quantum computation. This review focuses on the research of 3D TIs doped with manganese (Mn). We summarize major progress in the study of Mn doped chalcogenide TIs, including Bi2Se3, Bi2Te3, and Bi2(Te,Se)3. The transport properties, in particular the anomalous Hall effect, of the Mn-doped Bi2Se3 are discussed in detail. Finally, we conclude with future prospects and challenges in further studies of Mn doped TIs.
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    Jing Teng, Nan Liu, Yongqing Li. Mn-doped topological insulators: a review[J]. Journal of Semiconductors, 2019, 40(8): 081507
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    Category: Reviews
    Received: Jun. 11, 2019
    Accepted: --
    Published Online: Sep. 18, 2021
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