Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Yating Wan; Daisuke Inoue; Daehwan Jung; Justin C. Norman; Chen Shang; Arthur C. Gossard; John E. Bowers

doi:10.1364/PRJ.6.000776

Journals >Photonics Research >Volume 6 >Issue 8 >Page 776 > Article

Photonics Research
Vol. 6, Issue 8, 776 (2018)

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability | On the Cover

Yating Wan^1,†,*, Daisuke Inoue^1,2,†, Daehwan Jung^1,†..., Justin C. Norman³, Chen Shang³, Arthur C. Gossard^3,4 and John E. Bowers^3,4|Show fewer author(s)

Author Affiliations

¹Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

²Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

³Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

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DOI: 10.1364/PRJ.6.000776 Cite this Article Set citation alerts

Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers, "Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability," Photonics Res. 6, 776 (2018) Copy Citation Text

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