• Photonics Research
  • Vol. 10, Issue 6, 1332 (2022)
Yongduck Jung1、†, Daniel Burt1、†, Lin Zhang1, Youngmin Kim1, Hyo-Jun Joo1, Melvina Chen1, Simone Assali2, Oussama Moutanabbir2, Chuan Seng Tan1, and Donguk Nam1、*
Author Affiliations
  • 1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 2Department of Engineering Physics, École Polytechnique de Montréal, Montréal, Québec H3C 3A7, Canada
  • show less
    DOI: 10.1364/PRJ.455443 Cite this Article Set citation alerts
    Yongduck Jung, Daniel Burt, Lin Zhang, Youngmin Kim, Hyo-Jun Joo, Melvina Chen, Simone Assali, Oussama Moutanabbir, Chuan Seng Tan, Donguk Nam. Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density[J]. Photonics Research, 2022, 10(6): 1332 Copy Citation Text show less
    References

    [1] J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, J. Michel. Ge-on-Si laser operating at room temperature. Opt. Lett., 35, 679-681(2010).

    [2] R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, J. Schulze. Electrically pumped lasing from Ge Fabry-Perot resonators on Si. Opt. Express, 23, 14815-14822(2015).

    [3] D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller, K. Saraswat. Strained germanium thin film membrane on silicon substrate for optoelectronics. Opt. Express, 19, 25866-25872(2011).

    [4] A. Elbaz, M. Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, C. Baudot, F. Boeuf, P. Boucaud. Germanium microlasers on metallic pedestals. APL Photon., 3, 106102(2018).

    [5] D. Nam, D. Sukhdeo, J.-H. Kang, J. Petykiewicz, J. H. Lee, W. Jung, J. Vučković, M. Brongersma, K. Saraswat. Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles. Nano Lett., 13, 3118-3123(2013).

    [6] K. Guilloy, N. Pauc, A. Gassenq, Y.-M. Niquet, J.-M. Escalante, I. Duchemin, S. Tardif, G. O. Dias, D. Rouchon, J. Widiez, J.-M. Hartmann, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud. Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain. ACS Photon., 3, 1907-1911(2016).

    [7] J. Petykiewicz, D. Nam, D. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, K. Saraswat. Direct bandgap light emission from strained germanium nanowires coupled with high-Q nanophotonic cavities. Nano Lett., 16, 2168-2173(2016).

    [8] D. A. Smith, V. C. Holmberg, B. A. Korgel. Flexible germanium nanowires: ideal strength, room temperature plasticity, and bendable semiconductor fabric. ACS Nano, 4, 2356(2010).

    [9] D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, K. C. Saraswat. Direct bandgap germanium-on-silicon inferred from 5.7% ⟨100⟩ uniaxial tensile strain. Photon. Res., 2, A8-A13(2014).

    [10] Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. C. Luan, L. C. Kimerling. Strain-induced band gap shrinkage in Ge grown on Si substrate. Appl. Phys. Lett., 82, 2044-2046(2003).

    [11] Z. Qi, H. Sun, M. Luo, Y. Jung, D. Nam. Strained germanium nanowire optoelectronic devices for photonic-integrated circuits. J. Phys. Condens. Matter, 30, 334004(2018).

    [12] A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, P. Boucaud. Tensile-strained germanium microdisks. Appl. Phys. Lett., 102, 221112(2013).

    [13] Y. Jung, Y. Kim, D. Burt, H.-J. Joo, D.-H. Kang, M. Luo, M. Chen, L. Zhang, C. S. Tan, D. Nam. Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications. Opt. Express, 29, 14174-14181(2021).

    [14] M. de Kersauson, M. El Kurdi, S. David, X. Checoury, G. Fishman, S. Sauvage, R. Jakomin, G. Beaudoin, I. Sagnes, P. Boucaud. Optical gain in single tensile-strained germanium photonic wire. Opt. Express, 19, 17925-17934(2011).

    [15] S. Bao, D. Kim, C. Onwukaeme, S. Gupta, K. Saraswat, K. H. Lee, Y. Kim, D. Min, Y. Jung, H. Qiu, H. Wang, E. A. Fitzgerald, C. S. Tan, D. Nam. Low-threshold optically pumped lasing in highly strained germanium nanowires. Nat. Commun., 8, 1845(2017).

    [16] M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, H. Sigg. Analysis of enhanced light emission from highly strained germanium microbridges. Nat. Photonics, 7, 466-472(2013).

    [17] D. Nam, D. S. Sukhdeo, S. Gupta, J. H. Kang, M. L. Brongersma, K. C. Saraswat. Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser. IEEE J. Sel. Top. Quantum Electron., 20, 1500107(2014).

    [18] F. T. A. Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg. Lasing in strained germanium microbridges. Nat. Commun., 10, 2724(2019).

    [19] Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, V. Calvo. GeSn heterostructure micro-disk laser operating at 230 K. Opt. Express, 26, 32500-32508(2018).

    [20] J. Chrétien, N. Pauc, F. A. Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, V. Calvo. GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain. ACS Photon., 6, 2462-2469(2019).

    [21] D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, D. Buca. Optically pumped GeSn microdisk lasers on Si. ACS Photon., 3, 1279-1285(2016).

    [22] Y. Kim, S. Assali, D. Burt, Y. Jung, H.-J. Joo, M. Chen, Z. Ikonic, O. Moutanabbir, D. Nam. Enhanced GeSn microdisk lasers directly released on Si. Adv. Opt. Mater., 10, 2101213(2021).

    [23] A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, M. El Kurdi. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys. Nat. Photonics, 14, 375-382(2020).

    [24] A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, M. El Kurdi. Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region. ACS Photon., 7, 2713-2722(2020).

    [25] H. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, D. Nam. 1D photonic crystal direct bandgap GeSn-on-insulator laser. Appl. Phys. Lett., 119, 201101(2021).

    [26] S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, D. Grützmacher. Lasing in direct-bandgap GeSn alloy grown on Si. Nat. Photonics, 9, 88-92(2015).

    [27] Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, S.-Q. Yu. Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si. ACS Photon., 6, 1434-1441(2019).

    [28] J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, S.-Q. Yu. Si-based GeSn lasers with wavelength coverage of 2-3 μm and operating temperatures up to 180 K. ACS Photon., 5, 827-833(2018).

    [29] V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. A. Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, V. Calvo. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K. Appl. Phys. Lett., 111, 092101(2017).

    [30] D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, D. Nam. Theoretical modeling for the interaction of tin alloying with n-type doping and tensile strain for GeSn lasers. IEEE Electron Device Lett., 37, 1307-1310(2016).

    [31] R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris. Increased sminescence of strain-reduced, high-Sn composition Ge1xSnx alloys grown by molecular beam epitaxy. Appl. Phys. Lett., 99, 181125(2011).

    [32] D. Burt, H.-J. Joo, Y. Jung, Y. Kim, Y.-C. Huang, D. Nam. Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks. Opt. Express, 29, 28959-28967(2021).

    [33] Z. Zhou, B. Yin, J. Michel. On-chip light sources for silicon photonics. Light Sci. Appl., 4, e358(2015).

    [34] O. Moutanabbir, S. Assali, X. Gong, E. O’Reilly, C. A. Broderick, B. Marzban, J. Witzens, W. Du, S.-Q. Yu, A. Chelnokov, D. Buca, D. Nam. Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors. Appl. Phys. Lett., 118, 110502(2021).

    [35] R. Soref. The past, present, and future of silicon photonics. IEEE J. Sel. Top. Quantum Electron., 12, 1678-1687(2006).

    [36] D. S. Sukhdeo, S. Gupta, K. C. Saraswat, B. Dutt, D. Nam. Impact of minority carrier lifetime on the performance of strained germanium light sources. Opt. Commun., 364, 233-237(2016).

    [37] D. Nam, J.-H. Kang, M. L. Brongersma, K. C. Saraswat. Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence. Opt. Lett., 39, 6205-6208(2014).

    [38] G. Y. Chong, C. S. Tan. Low temperature PE-TEOS oxide bonding assisted by a thin layer of high-κ dielectric. Electrochem. Solid-State Lett., 12, 1015-1020(2009).

    [39] D. Lei, K. H. Lee, S. Bao, W. Wang, B. Wang, X. Gong, C. S. Tan, Y.-C. Yeo. GeSn-on-insulator substrate formed by direct wafer bonding. Appl. Phys. Lett., 109, 022106(2016).

    [40] Q. Zhang, Y. Liu, G. Han, Y. Shao, X. Gao, C. Zhang, J. Zhang, Y. Hao. Theoretical analysis of performance enhancement in GeSn/SiGeSn light-emitting diode enabled by Si3N4 liner stressor technique. Appl. Opt., 55, 9668-9674(2016).

    [41] N. Uchida, T. Maeda, R. R. Lieten, S. Okajima, Y. Ohishi, R. Takase, M. Ishimaru, J.-P. Locquet. Carrier and heat transport properties of polycrystalline GeSn films on SiO2. Appl. Phys. Lett., 107, 232105(2015).

    Yongduck Jung, Daniel Burt, Lin Zhang, Youngmin Kim, Hyo-Jun Joo, Melvina Chen, Simone Assali, Oussama Moutanabbir, Chuan Seng Tan, Donguk Nam. Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density[J]. Photonics Research, 2022, 10(6): 1332
    Download Citation