• Laser & Optoelectronics Progress
  • Vol. 59, Issue 7, 0717002 (2022)
Tingting Zhang, Mengdi Hou, Zhuonan Jia, Shuangquan Hua, Wenjie Wang*, and Shaoding Liu
Author Affiliations
  • Key Laboratory of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan , Shanxi 030024, China
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    DOI: 10.3788/LOP202259.0717002 Cite this Article Set citation alerts
    Tingting Zhang, Mengdi Hou, Zhuonan Jia, Shuangquan Hua, Wenjie Wang, Shaoding Liu. Laser-Based High Resolution Melting Analysis for Studying G-Quadruplux[J]. Laser & Optoelectronics Progress, 2022, 59(7): 0717002 Copy Citation Text show less
    Experimental materials and devices. (a) Structure of G-quadruplex; (b) experimental setup
    Fig. 1. Experimental materials and devices. (a) Structure of G-quadruplex; (b) experimental setup
    Spectrally integrated emission intensity as a function of the temperature. (a) Spectrally integrated emission intensity of the fluorescence from 555 nm to 620 nm as a function of the temperature with different concentrations of K+ solution at same pump energy density; (b) spectrally integrated emission intensity of the lasing from 580 nm to 620 nm as a function of the temperature with different concentrations of K+ solution at same pump energy density; (c) fluorescence spectra at different temperatures with 1 mmol/L concentration of K+ solution; (d) laser spectra at different temperatures with 1 mmol/L concentration of K+ solution
    Fig. 2. Spectrally integrated emission intensity as a function of the temperature. (a) Spectrally integrated emission intensity of the fluorescence from 555 nm to 620 nm as a function of the temperature with different concentrations of K+ solution at same pump energy density; (b) spectrally integrated emission intensity of the lasing from 580 nm to 620 nm as a function of the temperature with different concentrations of K+ solution at same pump energy density; (c) fluorescence spectra at different temperatures with 1 mmol/L concentration of K+ solution; (d) laser spectra at different temperatures with 1 mmol/L concentration of K+ solution
    Spectrally integrated emission intensity of lasing or the threshold of the lasing action as a function of the temperature. (a) Spectrally integrated emission intensity of the lasing from 580 nm to 620 nm as a function of the temperature with different concentrations of K+ solution at same pump energy density; (b) threshold of the lasing action from the acceptor as a function of the temperature with different concentrations of K+ solution
    Fig. 3. Spectrally integrated emission intensity of lasing or the threshold of the lasing action as a function of the temperature. (a) Spectrally integrated emission intensity of the lasing from 580 nm to 620 nm as a function of the temperature with different concentrations of K+ solution at same pump energy density; (b) threshold of the lasing action from the acceptor as a function of the temperature with different concentrations of K+ solution
    Tingting Zhang, Mengdi Hou, Zhuonan Jia, Shuangquan Hua, Wenjie Wang, Shaoding Liu. Laser-Based High Resolution Melting Analysis for Studying G-Quadruplux[J]. Laser & Optoelectronics Progress, 2022, 59(7): 0717002
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