• Acta Optica Sinica
  • Vol. 20, Issue 8, 1015 (2000)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Bistable Characteristics of Long External Cavity Semiconductor Lasers Using Expression of Threshold Carrier Density[J]. Acta Optica Sinica, 2000, 20(8): 1015 Copy Citation Text show less
    References

    [1] Sun H, Menhart S, Adams A. Calculation of spectral linewidth reduction of external-cavity strong-feedback semiconductor lasers. Appl. Opt., 1994, 33(21):4771~4775

    [2] Kakiuchida H, Ohtsubo J. Characteristics of a semiconductor laser with external feedback. IEEE J. Quant. Electron., 1994, QE-30(9):2087~2097

    [3] Zorabedian P, Trutna W R, Jr. Cutler L S et al.. Bistability in grating-tuned external-cavity semiconductor lasers. IEEE J. Quant. Electron., 1987, QE-23(11):1855~1860

    [4] Binder J, Cormack G D, Somani A. Intermodal tuning characteristics of an InGaAsP laser with feedback from an external-grating reflector. IEEE J. Quant. Electron., 1990, QE-26(7):1191~1199

    [5] Zorabedian P. Axial-mode instability in tunable external-cavity semiconductor lasers. IEEE J. Quant. Electron., 1994, QE-30(7):1542~1552

    [6] Yan C, Wang X, McInerey J G. Multistability in grating-tuned external-cavity semiconductor lasers. IEEE J. Quant. Electron., 1996, QE-32(5):813~821

    [7] Zhou X, Chen J, Lu Y. Analytical characterization of grating-tuned external-cavity semiconductor lasers. Appl. Opt., 1997, 36(8):4138~4141

    [8] Wang J, Chen J, Hao Y et al.. Additional wavelength shift of peak gain due to inhomogeneous distributions of carriers inside semiconductor lasers. IEEE Photon. Technol. Lett., 1993, 5(10):1171~1173

    CLP Journals

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Bistable Characteristics of Long External Cavity Semiconductor Lasers Using Expression of Threshold Carrier Density[J]. Acta Optica Sinica, 2000, 20(8): 1015
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