[1] Sun H, Menhart S, Adams A. Calculation of spectral linewidth reduction of external-cavity strong-feedback semiconductor lasers. Appl. Opt., 1994, 33(21):4771~4775
[2] Kakiuchida H, Ohtsubo J. Characteristics of a semiconductor laser with external feedback. IEEE J. Quant. Electron., 1994, QE-30(9):2087~2097
[3] Zorabedian P, Trutna W R, Jr. Cutler L S et al.. Bistability in grating-tuned external-cavity semiconductor lasers. IEEE J. Quant. Electron., 1987, QE-23(11):1855~1860
[4] Binder J, Cormack G D, Somani A. Intermodal tuning characteristics of an InGaAsP laser with feedback from an external-grating reflector. IEEE J. Quant. Electron., 1990, QE-26(7):1191~1199
[5] Zorabedian P. Axial-mode instability in tunable external-cavity semiconductor lasers. IEEE J. Quant. Electron., 1994, QE-30(7):1542~1552
[6] Yan C, Wang X, McInerey J G. Multistability in grating-tuned external-cavity semiconductor lasers. IEEE J. Quant. Electron., 1996, QE-32(5):813~821
[7] Zhou X, Chen J, Lu Y. Analytical characterization of grating-tuned external-cavity semiconductor lasers. Appl. Opt., 1997, 36(8):4138~4141
[8] Wang J, Chen J, Hao Y et al.. Additional wavelength shift of peak gain due to inhomogeneous distributions of carriers inside semiconductor lasers. IEEE Photon. Technol. Lett., 1993, 5(10):1171~1173