• Chinese Journal of Quantum Electronics
  • Vol. 41, Issue 6, 839 (2024)
ZHANG Dantong1,2 and XUE Dongfeng1,3,*
Author Affiliations
  • 1Multiscale Crystal Materials Research Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences,Shenzhen 518055, China
  • 2College of Chemistry and Chemical Engineering, University of Qiqihar, Qiqihar 161006, China
  • 3Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China
  • show less
    DOI: 10.3969/j.issn.1007-5461.2024.06.001 Cite this Article
    Dantong ZHANG, Dongfeng XUE. Lattice engineering for electronic state control research[J]. Chinese Journal of Quantum Electronics, 2024, 41(6): 839 Copy Citation Text show less
    Applications of lattice engineering in the directions of lattice degrees of freedom and quantum degrees of freedom LMCT: Ligand⁃to⁃metal charge transfer; MLCT: metal⁃to⁃ligand charge transfer
    Fig. 1. Applications of lattice engineering in the directions of lattice degrees of freedom and quantum degrees of freedom LMCT: Ligand⁃to⁃metal charge transfer; MLCT: metal⁃to⁃ligand charge transfer
    Research timeline of electronic states in lattice engineering[29-34]
    Fig. 2. Research timeline of electronic states in lattice engineering[29-34]
    (a) Atomic model and device application schematic of millimeter⁃sized graphene/h-BN in⁃plane heterostructures [37];(b) Schematic representation of the synthesis process from triphenyl⁃metal molecules to 2D organometallic lattices[39]; (c) Topological properties of the 2D triphenyl⁃lead lattice [band structure without (the left two) and with (the right two) spin⁃orbit coupling][39]
    Fig. 3. (a) Atomic model and device application schematic of millimeter⁃sized graphene/h-BN in⁃plane heterostructures [37];(b) Schematic representation of the synthesis process from triphenyl⁃metal molecules to 2D organometallic lattices[39]; (c) Topological properties of the 2D triphenyl⁃lead lattice [band structure without (the left two) and with (the right two) spin⁃orbit coupling][39]
    (a) Schematic illustration of the experimental strategy of self-assembly synthesis method of superlattice material[43]; (b) Low-magnification STEM image of the cross-section of a PbTiO3/SrTiO3 superlattice, XRD diffraction image and synchrotron⁃based, in⁃plane X-ray RSM study of the superlattice[44]; (c) Cross-sectional high-resolution STEM image of a PbTiO3/SrTiO3 superlattice, indicating an array of vortex⁃antivortex pairs within each PbTiO3 layer[44]
    Fig. 4. (a) Schematic illustration of the experimental strategy of self-assembly synthesis method of superlattice material[43]; (b) Low-magnification STEM image of the cross-section of a PbTiO3/SrTiO3 superlattice, XRD diffraction image and synchrotron⁃based, in⁃plane X-ray RSM study of the superlattice[44]; (c) Cross-sectional high-resolution STEM image of a PbTiO3/SrTiO3 superlattice, indicating an array of vortex⁃antivortex pairs within each PbTiO3 layer[44]
    (a) Schematic diagram of the photocatalytic degradation of fuel and photoinactivation of bacteria by Ce-doped Bi2MoO6 photocatalyst[50]; (b) Illustration of the formation mechanism and evolution process of crystal defects in Ce-doped Bi2MoO6 structure[50]; (c) Schematic diagram of the vacancy⁃ordered crystal structure of Cs2SnI6/Cs2TeI6[51]; (d) Schematic diagram of the reorientation of the unit cell to form isolated octahedral units[51]
    Fig. 5. (a) Schematic diagram of the photocatalytic degradation of fuel and photoinactivation of bacteria by Ce-doped Bi2MoO6 photocatalyst[50]; (b) Illustration of the formation mechanism and evolution process of crystal defects in Ce-doped Bi2MoO6 structure[50]; (c) Schematic diagram of the vacancy⁃ordered crystal structure of Cs2SnI6/Cs2TeI6[51]; (d) Schematic diagram of the reorientation of the unit cell to form isolated octahedral units[51]
    [in Chinese]
    Fig. 6. [in Chinese]