• Microelectronics
  • Vol. 51, Issue 3, 390 (2021)
MA Ting1, REN Fang1, XIA Shiqin1, LIAO Xiyi1, and ZHANG Peijian2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200584 Cite this Article
    MA Ting, REN Fang, XIA Shiqin, LIAO Xiyi, ZHANG Peijian. Research Progress of 1/f Noise Charateristics in Advanced MOSFETs[J]. Microelectronics, 2021, 51(3): 390 Copy Citation Text show less
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    MA Ting, REN Fang, XIA Shiqin, LIAO Xiyi, ZHANG Peijian. Research Progress of 1/f Noise Charateristics in Advanced MOSFETs[J]. Microelectronics, 2021, 51(3): 390
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