• Microelectronics
  • Vol. 53, Issue 4, 608 (2023)
ZHOU Yucheng1, LIAO Deyang1, MA Lei2, SANG Lei1, and HUANG Wen1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220499 Cite this Article
    ZHOU Yucheng, LIAO Deyang, MA Lei, SANG Lei, HUANG Wen. A Capacitor-less LDO with Transient Enhancement[J]. Microelectronics, 2023, 53(4): 608 Copy Citation Text show less

    Abstract

    A capacitor-less low dropout regulator (LDO) with high stability and good transient characteristic is proposed. The system’s transient response capability was improved by using the push-pull differentiator to detect the changes of output voltage caused by the load’s transient changes, and by increasing the charge and discharge currents of parasitic gate capacitors of the power transistors. After the error amplifier was connected to the buffer stage, the pole at the gate of the power transistor was pushed to the high frequency, and the miller compensation method was adopted to make the system stable within the full load range. The circuit was fabricated in TSMC 65 nm CMOS process, and the core circuit area was 0035 mm2. The tested results show that when the minimum supply voltage is 11 V, the voltage drop is only 100 mV. When the load current changes between 1 mA and 150 mA at 1 μs, the maximum overshot voltage and undershot voltage is 200 mV and 180 mV respectively.
    ZHOU Yucheng, LIAO Deyang, MA Lei, SANG Lei, HUANG Wen. A Capacitor-less LDO with Transient Enhancement[J]. Microelectronics, 2023, 53(4): 608
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