[1] W. Bogaerts, P. de Heyn, T. van Vaerenbergh, K. de Vos, S. Kumar Selvaraja, T. Claes, P. Dumon, P. Bienstman, D. van Thourhout, R. Baets. Silicon microring resonators. Laser Photon. Rev., 6, 47-73(2012).
[2] G. Li, X. Zheng, J. Yao, H. Thacker, I. Shubin, Y. Luo, K. Raj, J. E. Cunningham, A. V. Krishnamoorthy. 25 Gb/s 1 V-driving CMOS ring modulator with integrated thermal tuning. Opt. Express, 19, 20435-20443(2011).
[3] P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, M. Asghari. Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator. Opt. Express, 17, 22484-22490(2009).
[4] O. Dubray, S. Menezo, B. Blampey, P. Le Maitre, J. F. Carpentier, B. Ben Bakir, M. Fournier, S. Messaoudène. 20 Gb/s PAM-4 transmission from 35 to 90°C by modulating a silicon ring resonator modulator with 2Vpp. Optical Fiber Communication Conference, W2A.31(2015).
[5] R. Dubé-Demers, S. LaRochelle, W. Shi. Ultrafast pulse-amplitude modulation with a femtojoule silicon photonic modulator. Optica, 3, 622-627(2016).
[6] J. F. Buckwalter, X. Zheng, G. Li, K. Raj, A. V. Krishnamoorthy. A monolithic 25-Gb/s transceiver with photonic ring modulators and Ge detectors in a 130-nm CMOS SOI process. IEEE J. Solid-State Circuits, 47, 1309-1322(2012).
[7] O. Dubray, M. A. Seyedi, C. H. Chen, B. Charbonnier, A. Descos, M. Fiorentino, R. G. Beausoleil, S. Menezo. 30 Gbit/s PAM-4 transmission by modulating a dual silicon ring resonator modulator. IEEE Optical Interconnects Conference (OI), 6-7(2016).
[8] X. Xiao, H. Xu, X. Li, Y. Hu, K. Xiong, Z. Li, T. Chu, Y. Yu, J. Yu. 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions. Opt. Express, 20, 2507-2515(2012).
[9] Z. Yong, W. D. Sacher, Y. Huang, J. C. Mikkelsen, Y. Yang, X. Luo, P. Dumais, D. Goodwill, H. Bahrami, P. G.-Q. Lo, E. Bernier, J. K. S. Poon. U-shaped PN junctions for efficient silicon Mach–Zehnder and microring modulators in the O-band. Opt. Express, 25, 8425-8439(2017).
[10] S. Manipatruni, R. K. Dokania, B. Schmidt, N. Sherwood-Droz, C. B. Poitras, A. B. Apsel, M. Lipson. Wide temperature range operation of micrometer-scale silicon electro-optic modulators. Opt. Lett., 33, 2185-2187(2008).
[11] K. Padmaraju, D. F. Logan, X. Zhu, J. J. Ackert, A. P. Knights, K. Bergman. Integrated thermal stabilization of a microring modulator. Opt. Express, 21, 14342-14350(2013).
[12] F. Gan, T. Barwicz, M. A. Popovic, M. S. Dahlem, C. W. Holzwarth, P. T. Rakich, H. I. Smith, E. P. Ippen, F. X. Kartner. Maximizing the thermo-optic tuning range of silicon photonic structures. Photonics in Switching, 67-68(2007).
[13] D. Liang, G. Kurczveil, M. Fiorentino, S. Srinivasan, J. E. Bowers, R. G. Beausoleil. A tunable hybrid III–V-on-Si MOS microring resonator with negligible tuning power consumption. Optical Fiber Communication Conference, Th1K.4(2016).
[14] E. Feigenbaum, K. Diest, H. A. Atwater. Unity-order index change in transparent conducting oxides at visible frequencies. Nano Lett., 10, 2111-2116(2010).
[15] M. G. Wood, S. Campione, S. Parameswaran, T. S. Luk, J. R. Wendt, D. K. Serkland, G. A. Keeler. Gigahertz speed operation of epsilon-near-zero silicon photonic modulators. Optica, 5, 233-236(2018).
[16] R. Amin, R. Maiti, C. Carfano, Z. Ma, M. H. Tahersima, Y. Lilach, D. Ratnayake, H. Dalir, V. J. Sorger. 0.52 V·mm ITO-based Mach–Zehnder modulator in silicon photonics. APL Photon., 3, 126104(2018).
[17] E. Li, Q. Gao, S. Liverman, A. X. Wang. One-volt silicon photonic crystal nanocavity modulator with indium oxide gate. Opt. Lett., 43, 4429-4432(2018).
[18] B. Meng, J. Booske, R. Cooper. Extended cavity perturbation technique to determine the complex permittivity of dielectric materials. IEEE Trans. Microw. Theory Tech., 43, 2633-2636(1995).
[19] E. Li, Q. Gao, R. T. Chen, A. X. Wang. Ultracompact silicon-conductive oxide nanocavity modulator with 0.02 lambda-cubic active volume. Nano Lett., 18, 1075-1081(2018).
[20] S. Campione, M. G. Wood, D. K. Serkland, S. Parameswaran, J. Ihlefeld, T. S. Luk, J. R. Wendt, K. M. Geib, G. A. Keeler. Submicrometer epsilon-near-zero electroabsorption modulators enabled by high-mobility cadmium oxide. IEEE Photon. J., 9, 6601307(2017).
