Contents
2019
Volume: 7 Issue 4
14 Article(s)
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Research Articles
Lasers and Laser Optics
Revelation of the birth and extinction dynamics of solitons in SWNT-mode-locked fiber lasers
Yudong Cui, and Xueming Liu
The dispersive Fourier transform (DFT) technique opens a fascinating pathway to explore ultrafast non-repetitive events and has been employed to study the build-up process of mode-locked lasers. However, the shutting process for the mode-locked fiber laser seems to be beyond the scope of researchers, and the starting dynamics under near-zero dispersion remains unclear. Here, the complete evolution dynamics (from birth to extinction) of the conventional soliton (CS), stretched pulse (SP), and dissipative soliton (DS) are investigated by using the DFT technique. CS, SP, and DS fiber lasers mode locked by single-walled carbon nanotubes (SWNTs) are implemented via engineering the intracavity dispersion map. The relaxation oscillation can always be observed before the formation of stable pulse operation due to the inherent advantage of SWNT, but it exhibits distinct evolution dynamics in the starting and shutting processes. The shutting processes are dependent on the dispersion condition and turn-off time, which is against common sense. Some critical phenomena are also observed, including transient complex spectrum broadening and frequency-shift interaction of SPs and picosecond pulses. These results will further deepen understanding of the mode-locked fiber laser from a real-time point of view and are helpful for laser design and applications.The dispersive Fourier transform (DFT) technique opens a fascinating pathway to explore ultrafast non-repetitive events and has been employed to study the build-up process of mode-locked lasers. However, the shutting process for the mode-locked fiber laser seems to be beyond the scope of researchers, and the starting dynamics under near-zero dispersion remains unclear. Here, the complete evolution dynamics (from birth to extinction) of the conventional soliton (CS), stretched pulse (SP), and dissipative soliton (DS) are investigated by using the DFT technique. CS, SP, and DS fiber lasers mode locked by single-walled carbon nanotubes (SWNTs) are implemented via engineering the intracavity dispersion map. The relaxation oscillation can always be observed before the formation of stable pulse operation due to the inherent advantage of SWNT, but it exhibits distinct evolution dynamics in the starting and shutting processes. The shutting processes are dependent on the dispersion condition and turn-off time, which is against common sense. Some critical phenomena are also observed, including transient complex spectrum broadening and frequency-shift interaction of SPs and picosecond pulses. These results will further deepen understanding of the mode-locked fiber laser from a real-time point of view and are helpful for laser design and applications..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 423 (2019)
Soliton and bound-state soliton mode-locked fiber laser based on a MoS2/fluorine mica Langmuir–Blodgett film saturable absorber
Ruidong Lü, Yonggang Wang, Jiang Wang, Wei Ren, Lu Li, Sicong Liu, Zhendong Chen, Yongfang Li, Hongying Wang, and Fuxing Fu
In this article, we report on an experimentally generated soliton and bound-state soliton passively mode-locked erbium-doped fiber laser by incorporating a saturable absorber (SA) made of MoS2/fluorine mica (FM) that was fabricated with the Langmuir–Blodgett (LB) method. The FM substrate is 20 μm thick and easy to bend or cut, like a polymer. However, it has a higher damage threshold and a better thermal dissipation than polymers. In addition, the LB method can be used to fabricate a thin film with good uniformity. In this study, the modulation depth, saturable intensity, and unsaturated loss of the SA are measured as 5.9%, 57.69 MW/cm2, and 13.4%, respectively. Based on the SA, a soliton mode-locked laser is achieved. The pulse duration, repetition rate, and signal-to-noise ratio are 581 fs, 15.67 MHz, and 65 dB, respectively. By adjusting the polarization controller and pump power, we obtain a bound-state soliton mode-locked pulse. The temporal interval between the two solitons forming the bound-state pulse is 2.7 ps. The repetition rate of the bound-state pulses is proportional to the pump power. The maximum repetition rate is 517 MHz, corresponding to the 33rd harmonic of the fundamental repetition rate. The results indicate that the MoS2/FM LB film absorber is a promising photonic device in ultrafast fiber lasers.In this article, we report on an experimentally generated soliton and bound-state soliton passively mode-locked erbium-doped fiber laser by incorporating a saturable absorber (SA) made of MoS2/fluorine mica (FM) that was fabricated with the Langmuir–Blodgett (LB) method. The FM substrate is 20 μm thick and easy to bend or cut, like a polymer. However, it has a higher damage threshold and a better thermal dissipation than polymers. In addition, the LB method can be used to fabricate a thin film with good uniformity. In this study, the modulation depth, saturable intensity, and unsaturated loss of the SA are measured as 5.9%, 57.69 MW/cm2, and 13.4%, respectively. Based on the SA, a soliton mode-locked laser is achieved. The pulse duration, repetition rate, and signal-to-noise ratio are 581 fs, 15.67 MHz, and 65 dB, respectively. By adjusting the polarization controller and pump power, we obtain a bound-state soliton mode-locked pulse. The temporal interval between the two solitons forming the bound-state pulse is 2.7 ps. The repetition rate of the bound-state pulses is proportional to the pump power. The maximum repetition rate is 517 MHz, corresponding to the 33rd harmonic of the fundamental repetition rate. The results indicate that the MoS2/FM LB film absorber is a promising photonic device in ultrafast fiber lasers..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 431 (2019)
Optical and Photonic Materials
Observation of optical refrigeration in a holmium-doped crystal
Saeid Rostami, Alexander R. Albrecht, Azzurra Volpi, and Mansoor Sheik-Bahae
We report, to the best of our knowledge, the first demonstration of solid-state optical refrigeration of a Ho-doped material. A 1 mol% Ho-doped yttrium lithium fluoride (YLF) crystal is cooled by mid-IR laser radiation, and its external quantum efficiency and parasitic background absorption are evaluated. Using detailed temperature-dependent spectroscopic analysis, the minimum achievable temperature of a 1% Ho:YLF sample is estimated. Owing to its narrower ground- and excited-state manifolds, larger absorption cross section, and the coincidence of the optimum cooling wavelength of 2070 nm with commercially available high-power and highly efficient Tm-fiber lasers, Ho3+-doped crystals are superior to Tm3+-doped systems for mid-IR optical refrigeration. With further improvement in material purity and increased doping concentration, they offer great potential towards enhancing the cooling efficiency nearly two-fold over the best current Yb:YLF systems, achieving lower temperatures as well as for the realization of eye-safe mid-IR high-power radiation balanced lasers.We report, to the best of our knowledge, the first demonstration of solid-state optical refrigeration of a Ho-doped material. A 1 mol% Ho-doped yttrium lithium fluoride (YLF) crystal is cooled by mid-IR laser radiation, and its external quantum efficiency and parasitic background absorption are evaluated. Using detailed temperature-dependent spectroscopic analysis, the minimum achievable temperature of a 1% Ho:YLF sample is estimated. Owing to its narrower ground- and excited-state manifolds, larger absorption cross section, and the coincidence of the optimum cooling wavelength of 2070 nm with commercially available high-power and highly efficient Tm-fiber lasers, Ho3+-doped crystals are superior to Tm3+-doped systems for mid-IR optical refrigeration. With further improvement in material purity and increased doping concentration, they offer great potential towards enhancing the cooling efficiency nearly two-fold over the best current Yb:YLF systems, achieving lower temperatures as well as for the realization of eye-safe mid-IR high-power radiation balanced lasers..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 445 (2019)
Optical Devices
Non-Hermitian degeneracies of internal–external mode pairs in dielectric microdisks
Chang-Hwan Yi, Julius Kullig, Martina Hentschel, and Jan Wiersig
Open quantum and wave systems can exhibit non-Hermitian degeneracies called exceptional points, where both the eigenvalues and the corresponding eigenstates coalesce. Previously, such exceptional points have been investigated in dielectric microcavities in terms of optical modes which are well confined inside the cavity. However, beside these so-called “internal modes” with a relatively high quality factor, there exists another kind of mode called “external modes,” which have a large decay rate and almost zero intensity inside the cavity. In the present paper, we demonstrate the physical significance of the external modes via the occurrence of exceptional points of internal–external mode pairs for transverse electric polarization. Our numerical studies show that these exceptional points can be achieved by either a boundary deformation of the microdisk or by introducing absorption into a circular cavity.Open quantum and wave systems can exhibit non-Hermitian degeneracies called exceptional points, where both the eigenvalues and the corresponding eigenstates coalesce. Previously, such exceptional points have been investigated in dielectric microcavities in terms of optical modes which are well confined inside the cavity. However, beside these so-called “internal modes” with a relatively high quality factor, there exists another kind of mode called “external modes,” which have a large decay rate and almost zero intensity inside the cavity. In the present paper, we demonstrate the physical significance of the external modes via the occurrence of exceptional points of internal–external mode pairs for transverse electric polarization. Our numerical studies show that these exceptional points can be achieved by either a boundary deformation of the microdisk or by introducing absorption into a circular cavity..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 464 (2019)
Optoelectronics
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Xuanhu Chen, Fangfang Ren, Shulin Gu, and Jiandong Ye
Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga2O3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys. The basic working principles of photodetectors and the fundamental properties and synthesis of Ga2O3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga2O3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga2O3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys. The basic working principles of photodetectors and the fundamental properties and synthesis of Ga2O3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga2O3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 381 (2019)
Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer | On the Cover
Sung-Wen Huang Chen, Chih-Chiang Shen, Tingzhu Wu, Zhen-You Liao, Lee-Feng Chen, Jia-Rou Zhou, Chun-Fu Lee, Chih-Hao Lin, Chien-Chung Lin, Chin-Wei Sher, Po-Tsung Lee, An-Jye Tzou, Zhong Chen, and Hao-Chung Kuo
Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al2O3 layer was deposited on the sidewall of NR-μLEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al2O3 layer was deposited on the sidewall of NR-μLEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 416 (2019)
Plasmonics and Metamaterials
Experimental demonstration of ultra-large-scale terahertz all-dielectric metamaterials
Ke Bi, Daquan Yang, Jia Chen, Qingmin Wang, Hongya Wu, Chuwen Lan, and Yuping Yang
All-dielectric metamaterials have emerged as a promising platform for low-loss and highly efficient terahertz devices. However, existing fabrication methods have difficulty in achieving a good balance between precision and cost. Here, inspired by the nano-template-assisted self-assembly method, we develop a micro-template-assisted self-assembly (MTAS) method to prepare large-scale, high-precision, and flexible ceramic microsphere all-dielectric metamaterials with an area exceeding 900 cm×900 cm. Free from organic solvents, vacuum, and complex equipment, the MTAS method ensures low-cost and environmentally friendly fabrication. The ceramic microsphere resonators can be readily assembled into nearly arbitrary arrangements and complex aggregates, such as dimers, trimers, quadrumers, and chains. Finally, using the heat-shrinkable substrate and dipole coupling effect, a broadband reflector with a bandwidth of 0.15 THz and a reflection of up to 95% is demonstrated. This work provides a versatile and powerful platform for terahertz all-dielectric metamaterials, with potential to be applied in a wide variety of high-efficiency terahertz devices.All-dielectric metamaterials have emerged as a promising platform for low-loss and highly efficient terahertz devices. However, existing fabrication methods have difficulty in achieving a good balance between precision and cost. Here, inspired by the nano-template-assisted self-assembly method, we develop a micro-template-assisted self-assembly (MTAS) method to prepare large-scale, high-precision, and flexible ceramic microsphere all-dielectric metamaterials with an area exceeding 900 cm×900 cm. Free from organic solvents, vacuum, and complex equipment, the MTAS method ensures low-cost and environmentally friendly fabrication. The ceramic microsphere resonators can be readily assembled into nearly arbitrary arrangements and complex aggregates, such as dimers, trimers, quadrumers, and chains. Finally, using the heat-shrinkable substrate and dipole coupling effect, a broadband reflector with a bandwidth of 0.15 THz and a reflection of up to 95% is demonstrated. This work provides a versatile and powerful platform for terahertz all-dielectric metamaterials, with potential to be applied in a wide variety of high-efficiency terahertz devices..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 457 (2019)
Transparently curved metamaterial with broadband millimeter wave absorption
Cheng Zhang, Jin Yang, Wenkang Cao, Wei Yuan, Junchen Ke, Liuxi Yang, Qiang Cheng, and Tiejun Cui
We present a conformal metamaterial with simultaneous optical transparency and broadband millimeter-wave absorption for a curved surface. By tailoring the reflection response of meta-atoms at oblique angles, it is possible to achieve excellent absorption performance from 26.5 to 40.0 GHz within a wide angular range from 0° to 60° for transverse-electric and transverse-magnetic waves. In the meantime, by employing transparent substrates, including polyvinyl chloride and polyethylene terephthalate, good optical transmittance (80.1%) and flexibility are obtained simultaneously. The reflectivity of a curved metallic surface coated with the proposed curved metamaterial is simulated and measured experimentally. Both results demonstrate excellent absorption performance of the metamaterial, which is highly favored for practical applications.We present a conformal metamaterial with simultaneous optical transparency and broadband millimeter-wave absorption for a curved surface. By tailoring the reflection response of meta-atoms at oblique angles, it is possible to achieve excellent absorption performance from 26.5 to 40.0 GHz within a wide angular range from 0° to 60° for transverse-electric and transverse-magnetic waves. In the meantime, by employing transparent substrates, including polyvinyl chloride and polyethylene terephthalate, good optical transmittance (80.1%) and flexibility are obtained simultaneously. The reflectivity of a curved metallic surface coated with the proposed curved metamaterial is simulated and measured experimentally. Both results demonstrate excellent absorption performance of the metamaterial, which is highly favored for practical applications..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 478 (2019)
Semiconductor UV Photonics
Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes
Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, and Hao-Chung Kuo
It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately, enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained.It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately, enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, B1 (2019)
Silicon Photonics
25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
Daniel Benedikovic, Léopold Virot, Guy Aubin, Farah Amar, Bertrand Szelag, Bayram Karakus, Jean-Michel Hartmann, Carlos Alonso-Ramos, Xavier Le Roux, Paul Crozat, Eric Cassan, Delphine Marris-Morini, Charles Baudot, Frédéric Boeuf, Jean-Marc Fédéli, Christophe Kopp, and Laurent Vivien
Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the high-data-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of ～9 GHz at ?1 V and ～30 GHz at ?3 V, with a leakage dark current as low as ～150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10?9 is achieved for conventional 10 Gbps, 20 Gbps, and 25 Gbps data rates, yielding optical power sensitivities of ?13.85 dBm, ?12.70 dBm, and ?11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the high-data-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of ～9 GHz at ?1 V and ～30 GHz at ?3 V, with a leakage dark current as low as ～150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10?9 is achieved for conventional 10 Gbps, 20 Gbps, and 25 Gbps data rates, yielding optical power sensitivities of ?13.85 dBm, ?12.70 dBm, and ?11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 437 (2019)
Transparent conductive oxide-gated silicon microring with extreme resonance wavelength tunability
Erwen Li, Behzad Ashrafi Nia, Bokun Zhou, and Alan X. Wang
Transparent conductive oxides have attracted escalating research interest for integrated photonic devices and metasurfaces due to the extremely large electro-optic modulation of the refractive index by the free-carrier-induced plasma dispersion effect. In this paper, we have designed and fabricated a silicon microring resonator using an indium-tin oxide gate as the electric-tuning electrode. It achieved an ultralarge resonance wavelength tunability of 271 pm/V, which is obtained through the reduced width of the ring waveguide and a high-dielectric-constant HfO2 insulator. We demonstrated a broad resonance wavelength tuning range of over 2 nm with an ultrafast response time of less than 12 ns and near-zero static power consumption, which outperforms traditional thermal tuning.Transparent conductive oxides have attracted escalating research interest for integrated photonic devices and metasurfaces due to the extremely large electro-optic modulation of the refractive index by the free-carrier-induced plasma dispersion effect. In this paper, we have designed and fabricated a silicon microring resonator using an indium-tin oxide gate as the electric-tuning electrode. It achieved an ultralarge resonance wavelength tunability of 271 pm/V, which is obtained through the reduced width of the ring waveguide and a high-dielectric-constant HfO2 insulator. We demonstrated a broad resonance wavelength tuning range of over 2 nm with an ultrafast response time of less than 12 ns and near-zero static power consumption, which outperforms traditional thermal tuning..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 473 (2019)
Ultrafast Optics
High power, microjoule-level diffraction-limited picosecond oscillator based on Nd:GdVO4 bulk crystal
Jie Guo, Wei Wang, Hua Lin, and Xiaoyan Liang
1.2 μJ pulses with average power of 9 W were directly generated from a passively mode-locked picosecond oscillator based on a Nd:GdVO4 bulk crystal. Short cavity operation in continuous wave and mode-locking regimes was conducted first to confirm the resonator performance and proper alignment. With a carefully calibrated q-preserving multi-pass cell inserted into the laser cavity, the cavity length of the original short cavity was extended while the mode-matching condition was maintained fairly well. Compared with the short cavity, nearly fivefold energy enhancement was achieved while the diffraction-limited beam quality was undisturbed. To the best of our knowledge, this is the highest output power ever produced from a mode-locked oscillator based on a single bulk crystal at a repetition rate below 10 MHz without cavity dumping.1.2 μJ pulses with average power of 9 W were directly generated from a passively mode-locked picosecond oscillator based on a Nd:GdVO4 bulk crystal. Short cavity operation in continuous wave and mode-locking regimes was conducted first to confirm the resonator performance and proper alignment. With a carefully calibrated q-preserving multi-pass cell inserted into the laser cavity, the cavity length of the original short cavity was extended while the mode-matching condition was maintained fairly well. Compared with the short cavity, nearly fivefold energy enhancement was achieved while the diffraction-limited beam quality was undisturbed. To the best of our knowledge, this is the highest output power ever produced from a mode-locked oscillator based on a single bulk crystal at a repetition rate below 10 MHz without cavity dumping..
Photonics Research
- Publication Date: May. 07, 2019
- Vol. 7, Issue 4, 452 (2019)
Controlling multiphoton excited energy transfer from Tm3+ to Yb3+ ions by a phase-shaped femtosecond laser field
Ye Zheng, Lianzhong Deng, Jianping Li, Tianqing Jia, Jianrong Qiu, Zhenrong Sun, and Shian Zhang
The ability to control the energy transfer in rare-earth ion-doped luminescent materials is very important for various related application areas such as color display, bio-labeling, and new light sources. Here, a phase-shaped femtosecond laser field is first proposed to control the transfer of multiphoton excited energy from Tm3+ to Yb3+ ions in co-doped glass ceramics. Tm3+ ions are first sensitized by femtosecond laser-induced multiphoton absorption, and then a highly efficient energy transfer occurs between the highly excited state Tm3+ sensitizers and the ground-state Yb3+ activators. The laser peak intensity and polarization dependences of the laser-induced luminescence intensities are shown to serve as proof of the multiphoton excited energy transfer pathway. The efficiency of the multiphoton excited energy transfer can be efficiently enhanced or completely suppressed by optimizing the spectral phase of the femtosecond laser with a feedback control strategy based on a genetic algorithm. A (1+2) resonance-mediated three-photon excitation model is presented to explain the experimental observations. This study provides a new way to induce and control the energy transfer in rare-earth ion-doped luminescent materials, and should have a positive contribution to the development of related applications.The ability to control the energy transfer in rare-earth ion-doped luminescent materials is very important for various related application areas such as color display, bio-labeling, and new light sources. Here, a phase-shaped femtosecond laser field is first proposed to control the transfer of multiphoton excited energy from Tm3+ to Yb3+ ions in co-doped glass ceramics. Tm3+ ions are first sensitized by femtosecond laser-induced multiphoton absorption, and then a highly efficient energy transfer occurs between the highly excited state Tm3+ sensitizers and the ground-state Yb3+ activators. The laser peak intensity and polarization dependences of the laser-induced luminescence intensities are shown to serve as proof of the multiphoton excited energy transfer pathway. The efficiency of the multiphoton excited energy transfer can be efficiently enhanced or completely suppressed by optimizing the spectral phase of the femtosecond laser with a feedback control strategy based on a genetic algorithm. A (1+2) resonance-mediated three-photon excitation model is presented to explain the experimental observations. This study provides a new way to induce and control the energy transfer in rare-earth ion-doped luminescent materials, and should have a positive contribution to the development of related applications..
Photonics Research
- Publication Date: Apr. 11, 2019
- Vol. 7, Issue 4, 486 (2019)
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