• Acta Optica Sinica
  • Vol. 42, Issue 19, 1916001 (2022)
Chengcheng Huang1, Yonggang Zhang1、*, Lanju Liang2、**, Haiyun Yao2, Wenjia Liu1, and Fu Qiu1
Author Affiliations
  • 1School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan 232001, Anhui , China
  • 2School of Opto-Electronic Engineering, Zaozhuang University, Zaozhuang 277160, Shandong , China
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    DOI: 10.3788/AOS202242.1916001 Cite this Article Set citation alerts
    Chengcheng Huang, Yonggang Zhang, Lanju Liang, Haiyun Yao, Wenjia Liu, Fu Qiu. Narrow/Broad Band Switchable Terahertz Absorber Based on Graphene and Vanadium Dioxide Composite Structure[J]. Acta Optica Sinica, 2022, 42(19): 1916001 Copy Citation Text show less
    Schematic diagrams of absorber unit cell. (a) Side view of unit cell; (b) top view of unit cell; (c) schematic of applying voltage to graphene
    Fig. 1. Schematic diagrams of absorber unit cell. (a) Side view of unit cell; (b) top view of unit cell; (c) schematic of applying voltage to graphene
    Conductivity of graphene at different Fermi levels. (a) Real part of conductivity; (b) imaginary part of conductivity
    Fig. 2. Conductivity of graphene at different Fermi levels. (a) Real part of conductivity; (b) imaginary part of conductivity
    Simulated absorption spectra of absorber under different VO2 states
    Fig. 3. Simulated absorption spectra of absorber under different VO2 states
    Absorption spectra and relative impedance of absorbers under different VO2 states. (a) Metallic state; (b) insulating state
    Fig. 4. Absorption spectra and relative impedance of absorbers under different VO2 states. (a) Metallic state; (b) insulating state
    Distributions of surface current and magnetic field of YOZ plane. (a)(e)(i)(m) Current distributions of graphene at four frequency points; (b)(f)(j)(n) current distributions of VO2 at four frequency points; (c)(g)(k)(o) current distributions of metal substrate of structure at four frequency points; (d)(h)(l)(p) magnetic field distributions of air above graphene structure at four frequency points
    Fig. 5. Distributions of surface current and magnetic field of YOZ plane. (a)(e)(i)(m) Current distributions of graphene at four frequency points; (b)(f)(j)(n) current distributions of VO2 at four frequency points; (c)(g)(k)(o) current distributions of metal substrate of structure at four frequency points; (d)(h)(l)(p) magnetic field distributions of air above graphene structure at four frequency points
    Absorption spectra of absorber under different Fermi levels of graphene and different conductivity of VO2. (a) Absorption spectra under different Fermi levels of graphene; (b) absorption spectra under different conductivities of VO2; (c) absorption spectra for varying both conductivity of VO2 and Fermi levels of graphene
    Fig. 6. Absorption spectra of absorber under different Fermi levels of graphene and different conductivity of VO2. (a) Absorption spectra under different Fermi levels of graphene; (b) absorption spectra under different conductivities of VO2; (c) absorption spectra for varying both conductivity of VO2 and Fermi levels of graphene
    Absorption spectra of absorber with different polarization angles
    Fig. 7. Absorption spectra of absorber with different polarization angles
    Absorption spectra of absorber at different incident angles,and distributions of magnetic field on YOZ plane with different polarization modes and different incident angles at frequency of 0.99 THz. (a) Absorption spectrum for TE polarization; (b) absorption spectrum for TM polarization; (c) distributions of magnetic field on YOZ plane with different polarization modes and different incident angles at frequency of 0.99 THz
    Fig. 8. Absorption spectra of absorber at different incident angles,and distributions of magnetic field on YOZ plane with different polarization modes and different incident angles at frequency of 0.99 THz. (a) Absorption spectrum for TE polarization; (b) absorption spectrum for TM polarization; (c) distributions of magnetic field on YOZ plane with different polarization modes and different incident angles at frequency of 0.99 THz
    Absorption characteristics for different refractive indices of object to be measured and absorber sensitivity; (a) Absorption characteristics for different refractive indices of object to be measured; (b) absorber sensitivity
    Fig. 9. Absorption characteristics for different refractive indices of object to be measured and absorber sensitivity; (a) Absorption characteristics for different refractive indices of object to be measured; (b) absorber sensitivity
    Ef /eVAbsorptionAbsorption band /THzRelative bandwidth /%
    00.93.298 (0.858-4.156)131.6
    0.20.93.388 (0.821-4.209)134.7
    0.50.93.528 (0.810-4.338)137.1
    0.80.93.616 (0.817-4.433)137.8
    1.00.93.779 (0.821-4.600)139.4
    Table 1. Absorption characteristics of absorber under different Fermi levels
    Ref. NoAbsorptionAbsorption band /THzRelative bandwidth /%Adjusting range /%
    70.93.3 (2.34-5.64)82.74-100
    240.92.6 (2.12-4.72)76-
    250.90.55 (1.05-1.6)41.526-99.2
    260.91.25 (4.32-5.57)25.315-96
    270.92.01 (1.44-3.45)82.23.4-100
    280.93.43 (0.93-4.36)129.78-100
    This paper0.93.779 (0.821-4.6)139.41.1-100
    Table 2. Performance comparison between different absorbers
    Chengcheng Huang, Yonggang Zhang, Lanju Liang, Haiyun Yao, Wenjia Liu, Fu Qiu. Narrow/Broad Band Switchable Terahertz Absorber Based on Graphene and Vanadium Dioxide Composite Structure[J]. Acta Optica Sinica, 2022, 42(19): 1916001
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