Author Affiliations
1Institute of Laser Advanced Manufacturing, Zhejiang University of Technology, Hangzhou, Zhejiang 310023, China2College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang 310023, China3Collaborative Innovation Center of High-End Laser Manufacturing Equipment (National 2011 Plan), Zhejiang University of Technology, Hangzhou, Zhejiang 310023, China4Laser Technology Research Institute, National Technical University of Ukraine, Kiev 03056, Ukraineshow less
Fig. 1. Different relaxation channels for energy transfer during binary collisions of molecules
[79] Fig. 2. Commonly used experimental setup for pyrolysis LCVD
Fig. 3. (a) Plot of three regimes for incubation, nucleation and coalescence of W deposited at 2.44 W; (b) Thickness of W films deposited on glass substrates plotted as a function of deposition time; (c) Surface morphology of deposited W films deposited at different laser power
[81] Fig. 4. SEM images of diamond grown on tungsten surface of (a) poorly and (b) heavily nucleated
[96] Fig. 5. (a) XRD patterns of the β-SiC films prepared at different laser power, deposition pressure and deposition temperature; (b) Effects of laser power and deposition pressure on preferred crystalline orientations of β-SiC films
[97] Fig. 6. (a) Surface and (b) cross-sectional SEM images of HfO
2 films prepared using conventional CVD at 1173 K, (c), (e) surface and the corresponding (d), (f) cross-sectional SEM images of (c), (d) HfO
2 films prepared at 1203 K and (e), (f) HfO
2 films prepared at 1383 K by pyrolysis CVD, effect of deposition temperature on deposition rate, crystallite size, and morphological evolution in HfO
2 films prepared using (g) conventional CVD and (h) pyrolysis CVD
[71] Fig. 7. Surface and cross‐sectional SEM images of the SrTiO
3 films prepared at 760 K (a, b) , 957 K (c, d) and 1104 K (e, f) with a laser power of 150 W, respectively; (g) Influences of the deposition temperature on thickness, grains size, grains shape, and preferred orientation of the SrTiO
3 films
[128] Fig. 8. (a), (b) TEM observations and (c) atomic configuration of the nanoforest-like 3C-SiC/graphene composite films deposited at 1523 K and 400 Pa, (d) schematic illustration and (e) cycling performance of 3C-SiC/graphene nanoforest composite films with stable framework and continuous electron pathways
[136] Fig. 9. Commonly used experimental setup and principle of photolysis LCVD
Fig. 10. SEM photographs and corresponding 3D images of the deposited tungsten patterns for various laser power. (a) 0.21 mW; (b) 0.249 mW; (c) 0.468 mW; (d) 0.607 mW; (e) Variation of electrical resistivity of the deposit tungsten with respect to laser power; (f) Example of the tungsten interconnect deposited by LCVD for thin film transistor-liquid crystal display circuit repair
[150] Fig. 11. (a) Surface and cross-sectional SEM images of diamond films prepared at different laser energy densities; (b) The reaction process diagram of active species in the combustion flame under the ultraviolet light irradiation
[61] Fig. 12. Surface image surface and cross-sectional SEM images of TiN
x films prepared at
Tpre = 423 K with varied laser power. (a)
PL =50 W; (b)
PL =100 W; (c)
PL =150 W; (d)
PL =200 W, effects of
Tpre and
PL on (e) the deposition rate and (f) the deposition temperature of TiN
x films
[170] Fig. 13. Si
3N
4 film prepared by LVCD. (a) Precursor gas ratio and (b) RF power with different laser photolysis condition
[176] Fig. 14. Commonly used experimental setup for laser resonant excitation LCVD
Fig. 15. The influence of laser resonant excitation on CVD of carbon nano-onions. (a)~(c) Photographs of ethylene–oxygen flames; (d)~(f) High-resolution TEM images of CNOs, showing their atomic-level microstructure; (g), (h) Raman spectra and its fitting curve of CNOs
[180] Fig. 16. BDD prepared using resonant excitation LCVD method and their electrochemical performance in glucose tests. (a) SEM images of BDD films prepared at different laser power; (b) Schematic illustration of glucose detection setup; (c) CV scans; (d) Ampere scanning; (e) Potential window; (f) Nyquist plots
[43] Fig. 17. (a, b) Cross-sectional SEM images of GaN films and (c, d) XRD patterns of GaN grown at different temperature in LMOCVD and conventional MOCVD process, respectively
[54] Fig. 18. (a) Experimental setup for the CO
2 laser-assisted CCVD and (b) optical emission spectra and (c) mole fractions of the species of NH
3/C
2H
2/O
2 flames under different laser excitations measured using mass spectrometer
[181]; (d) Optical images of C
2H
4/C
2H
2/O
2 flames
[184] 技术类别 | 优点 | 缺点 | MOCVD | 大面积制备,高沉积精度 | 设备成本高,材料要求苛刻,沉积速度慢 | PCVD | 较低沉积温度,较快沉积速度,设备维护简单 | 反应过程复杂难以控制 | HFCVD | 大面积制备,适用于复杂形貌,操作系统简单 | 沉积速度慢 | CCVD | 大气环境下制备 | 沉积速度慢 | LCVD | 可局部制备,高沉积精度/效率/质量,成膜材料种类广泛 | 设备成本高,操作略复杂 |
|
Table 1. Comparison of various CVD techniques
激光器 | 光谱 | 波长/nm | 单光子能量/eV | 参考文献 | Nd:YAG | 红外 | 1064 | 1.2 | [42-44]
| 绿光 | 532 | 2.3 | [45-46]
| 紫外 | 351 | 3.5 | [47]
| CO2 | 红外 | 10600 | 0.1 | [48-52]
| 红外 | 9219 | 0.1 | [27, 53, 54]
| Ar+ | 可见光 | 514.5 | 2.4 | [55-57]
| InGaAs | 红外 | 808 | 1.5 | [58]
| ArF | 紫外 | 193 | 6.4 | [48, 59]
| KrCl | 紫外 | 222 | 5.5 | [60]
| KrF | 紫外 | 248 | 5.0 | [61-63]
| XeCl | 紫外 | 308 | 4.0 | [64]
|
|
Table 2. Commonly used laser sources for LCVD
年 | 材料 | 基体 | 光源 | 沉积参数 | 温度/(°C) | 速率/(μm/h) | 2021[28] | SmBa2Cu3O7-δ | LaAlO3 | 波长808 nm半导体连续激光器 | 780 | 8.76 | 2020[71] | HfO2 | AlN | 波长976 nm半导体连续激光器 | 600~1300 | 67 | 2020[72] | BCN | SiO2 | 波长1064 nm Nd:YAG连续激光器 | 1100 | 18.4 | 2020[73] | ZrCN | C | Nd:YAG连续激光器 | 1100~1180 | 40 | 2020[74] | SrTiO3 | MgAl2O4 | 波长1064 nm Nd:YAG连续激光器 | 900 | 20 | 2020[75] | Y-doped BaZrO3 | AlN | 波长1064 nm Nd:YAG连续激光器 | 645.1~656.3 | 2.67 | 2020[76] | β-Yb2Si2O7, X1/X2-Yb2SiO5 | AlN | 波长808 nm半导体连续激光器 | 750~1100 | 114~423、353~943 | 2019[77] | LaPO4 | Al2O3 | 波长1064 nm Nd:YAG连续激光器 | 802~847 | 58.6 | 2019[78] | SiBCN | Graphite | 波长1064 nm Nd:YAG连续激光器 | 1210~1410 | 1620 |
|
Table 3. Recent reports of thin film deposition using pyrolysis LCVD
年 | 材料 | 基体 | 光源 | 沉积参数 | 温度/(°C) | 速率/(μm/h) | 2020[141] | 金刚石 | Si | 波长532 nm超高斯分布连续激光器 | 700~900 | 0.38 | 2019[47] | W | TFT-LCD | 波长351 nm脉宽45 ns Nd:YAG脉冲激光器 | > 450 | - | 2018[59] | 金刚石 | WC | 波长193 nm脉宽15 ns ArF、波长248 nm脉宽20 ns KrF准分子激光器 | 2177 | 11、10.3 | 2018[142] | β-SiC | β-SiC | 波长808 nm InGaAlAs半导体激光器 | 1067~1257 | 50 | 2018[143] | Si3N4 | Si/PET | 波长193 nm ArF
准分子激光器
| 100 | 0.93 | 2017[144] | Ni | U | 波长248 nm KrF
准分子激光器
| 165~200 | - | 2011[145] | Cr2O3 | Al2O3 | 波长248 nm脉宽30 ns KrF准分子激光器 | 室温 | 360 |
|
Table 4. Reports of thin film deposition using photolysis LCVD recently