• Opto-Electronic Engineering
  • Vol. 49, Issue 2, 210333-1 (2022)
Lisha Fan1、2、3, Fan Liu1、2、3, Guolong Wu1、2、3, S. Kovalenko Volodymyr1、2、3、4, and Jianhua Yao1、2、3、*
Author Affiliations
  • 1Institute of Laser Advanced Manufacturing, Zhejiang University of Technology, Hangzhou, Zhejiang 310023, China
  • 2College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang 310023, China
  • 3Collaborative Innovation Center of High-End Laser Manufacturing Equipment (National 2011 Plan), Zhejiang University of Technology, Hangzhou, Zhejiang 310023, China
  • 4Laser Technology Research Institute, National Technical University of Ukraine, Kiev 03056, Ukraine
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    DOI: 10.12086/oee.2022.210333 Cite this Article
    Lisha Fan, Fan Liu, Guolong Wu, S. Kovalenko Volodymyr, Jianhua Yao. Research progress of laser-assisted chemical vapor deposition[J]. Opto-Electronic Engineering, 2022, 49(2): 210333-1 Copy Citation Text show less
    Different relaxation channels for energy transfer during binary collisions of molecules[79]
    Fig. 1. Different relaxation channels for energy transfer during binary collisions of molecules[79]
    Commonly used experimental setup for pyrolysis LCVD
    Fig. 2. Commonly used experimental setup for pyrolysis LCVD
    (a) Plot of three regimes for incubation, nucleation and coalescence of W deposited at 2.44 W; (b) Thickness of W films deposited on glass substrates plotted as a function of deposition time; (c) Surface morphology of deposited W films deposited at different laser power[81]
    Fig. 3. (a) Plot of three regimes for incubation, nucleation and coalescence of W deposited at 2.44 W; (b) Thickness of W films deposited on glass substrates plotted as a function of deposition time; (c) Surface morphology of deposited W films deposited at different laser power[81]
    SEM images of diamond grown on tungsten surface of (a) poorly and (b) heavily nucleated[96]
    Fig. 4. SEM images of diamond grown on tungsten surface of (a) poorly and (b) heavily nucleated[96]
    (a) XRD patterns of the β-SiC films prepared at different laser power, deposition pressure and deposition temperature; (b) Effects of laser power and deposition pressure on preferred crystalline orientations of β-SiC films[97]
    Fig. 5. (a) XRD patterns of the β-SiC films prepared at different laser power, deposition pressure and deposition temperature; (b) Effects of laser power and deposition pressure on preferred crystalline orientations of β-SiC films[97]
    (a) Surface and (b) cross-sectional SEM images of HfO2 films prepared using conventional CVD at 1173 K, (c), (e) surface and the corresponding (d), (f) cross-sectional SEM images of (c), (d) HfO2 films prepared at 1203 K and (e), (f) HfO2 films prepared at 1383 K by pyrolysis CVD, effect of deposition temperature on deposition rate, crystallite size, and morphological evolution in HfO2 films prepared using (g) conventional CVD and (h) pyrolysis CVD[71]
    Fig. 6. (a) Surface and (b) cross-sectional SEM images of HfO2 films prepared using conventional CVD at 1173 K, (c), (e) surface and the corresponding (d), (f) cross-sectional SEM images of (c), (d) HfO2 films prepared at 1203 K and (e), (f) HfO2 films prepared at 1383 K by pyrolysis CVD, effect of deposition temperature on deposition rate, crystallite size, and morphological evolution in HfO2 films prepared using (g) conventional CVD and (h) pyrolysis CVD[71]
    Surface and cross‐sectional SEM images of the SrTiO3 films prepared at 760 K (a, b) , 957 K (c, d) and 1104 K (e, f) with a laser power of 150 W, respectively; (g) Influences of the deposition temperature on thickness, grains size, grains shape, and preferred orientation of the SrTiO3 films[128]
    Fig. 7. Surface and cross‐sectional SEM images of the SrTiO3 films prepared at 760 K (a, b) , 957 K (c, d) and 1104 K (e, f) with a laser power of 150 W, respectively; (g) Influences of the deposition temperature on thickness, grains size, grains shape, and preferred orientation of the SrTiO3 films[128]
    (a), (b) TEM observations and (c) atomic configuration of the nanoforest-like 3C-SiC/graphene composite films deposited at 1523 K and 400 Pa, (d) schematic illustration and (e) cycling performance of 3C-SiC/graphene nanoforest composite films with stable framework and continuous electron pathways[136]
    Fig. 8. (a), (b) TEM observations and (c) atomic configuration of the nanoforest-like 3C-SiC/graphene composite films deposited at 1523 K and 400 Pa, (d) schematic illustration and (e) cycling performance of 3C-SiC/graphene nanoforest composite films with stable framework and continuous electron pathways[136]
    Commonly used experimental setup and principle of photolysis LCVD
    Fig. 9. Commonly used experimental setup and principle of photolysis LCVD
    SEM photographs and corresponding 3D images of the deposited tungsten patterns for various laser power. (a) 0.21 mW; (b) 0.249 mW; (c) 0.468 mW; (d) 0.607 mW; (e) Variation of electrical resistivity of the deposit tungsten with respect to laser power; (f) Example of the tungsten interconnect deposited by LCVD for thin film transistor-liquid crystal display circuit repair[150]
    Fig. 10. SEM photographs and corresponding 3D images of the deposited tungsten patterns for various laser power. (a) 0.21 mW; (b) 0.249 mW; (c) 0.468 mW; (d) 0.607 mW; (e) Variation of electrical resistivity of the deposit tungsten with respect to laser power; (f) Example of the tungsten interconnect deposited by LCVD for thin film transistor-liquid crystal display circuit repair[150]
    (a) Surface and cross-sectional SEM images of diamond films prepared at different laser energy densities; (b) The reaction process diagram of active species in the combustion flame under the ultraviolet light irradiation[61]
    Fig. 11. (a) Surface and cross-sectional SEM images of diamond films prepared at different laser energy densities;      (b) The reaction process diagram of active species in the combustion flame under the ultraviolet light irradiation[61]
    Surface image surface and cross-sectional SEM images of TiNx films prepared at Tpre = 423 K with varied laser power. (a) PL =50 W; (b) PL =100 W; (c) PL =150 W; (d) PL =200 W, effects of Tpre and PL on (e) the deposition rate and (f) the deposition temperature of TiNx films[170]
    Fig. 12. Surface image surface and cross-sectional SEM images of TiNx films prepared at Tpre = 423 K with varied laser power. (a) PL =50 W; (b) PL =100 W; (c) PL =150 W; (d) PL =200 W, effects of Tpre and PL on (e) the deposition rate and (f) the deposition temperature of TiNx films[170]
    Si3N4 film prepared by LVCD. (a) Precursor gas ratio and (b) RF power with different laser photolysis condition [176]
    Fig. 13. Si3N4 film prepared by LVCD. (a) Precursor gas ratio and (b) RF power with different laser photolysis condition [176]
    Commonly used experimental setup for laser resonant excitation LCVD
    Fig. 14. Commonly used experimental setup for laser resonant excitation LCVD
    The influence of laser resonant excitation on CVD of carbon nano-onions. (a)~(c) Photographs of ethylene–oxygen flames; (d)~(f) High-resolution TEM images of CNOs, showing their atomic-level microstructure; (g), (h) Raman spectra and its fitting curve of CNOs[180]
    Fig. 15. The influence of laser resonant excitation on CVD of carbon nano-onions. (a)~(c) Photographs of ethylene–oxygen flames; (d)~(f) High-resolution TEM images of CNOs, showing their atomic-level microstructure; (g), (h) Raman spectra and its fitting curve of CNOs[180]
    BDD prepared using resonant excitation LCVD method and their electrochemical performance in glucose tests. (a) SEM images of BDD films prepared at different laser power; (b) Schematic illustration of glucose detection setup; (c) CV scans; (d) Ampere scanning; (e) Potential window; (f) Nyquist plots[43]
    Fig. 16. BDD prepared using resonant excitation LCVD method and their electrochemical performance in glucose tests. (a) SEM images of BDD films prepared at different laser power; (b) Schematic illustration of glucose detection setup; (c) CV scans; (d) Ampere scanning; (e) Potential window; (f) Nyquist plots[43]
    (a, b) Cross-sectional SEM images of GaN films and (c, d) XRD patterns of GaN grown at different temperature in LMOCVD and conventional MOCVD process, respectively[54]
    Fig. 17. (a, b) Cross-sectional SEM images of GaN films and (c, d) XRD patterns of GaN grown at different temperature in LMOCVD and conventional MOCVD process, respectively[54]
    (a) Experimental setup for the CO2 laser-assisted CCVD and (b) optical emission spectra and (c) mole fractions of the species of NH3/C2H2/O2 flames under different laser excitations measured using mass spectrometer[181]; (d) Optical images of C2H4/C2H2/O2 flames[184]
    Fig. 18. (a) Experimental setup for the CO2 laser-assisted CCVD and (b) optical emission spectra and (c) mole fractions of the species of NH3/C2H2/O2 flames under different laser excitations measured using mass spectrometer[181]; (d) Optical images of C2H4/C2H2/O2 flames[184]
    技术类别优点缺点
    MOCVD大面积制备,高沉积精度设备成本高,材料要求苛刻,沉积速度慢
    PCVD较低沉积温度,较快沉积速度,设备维护简单反应过程复杂难以控制
    HFCVD大面积制备,适用于复杂形貌,操作系统简单沉积速度慢
    CCVD大气环境下制备沉积速度慢
    LCVD可局部制备,高沉积精度/效率/质量,成膜材料种类广泛设备成本高,操作略复杂
    Table 1. Comparison of various CVD techniques
    激光器光谱波长/nm单光子能量/eV参考文献
    Nd:YAG红外10641.2[42-44]
    绿光5322.3[45-46]
    紫外3513.5[47]
    CO2红外106000.1[48-52]
    红外92190.1[27, 53, 54]
    Ar+可见光514.52.4[55-57]
    InGaAs红外8081.5[58]
    ArF紫外1936.4[48, 59]
    KrCl紫外2225.5[60]
    KrF紫外2485.0[61-63]
    XeCl紫外3084.0[64]
    Table 2. Commonly used laser sources for LCVD
    材料基体光源沉积参数
    温度/(°C)速率/(μm/h)
    2021[28]SmBa2Cu3O7-δLaAlO3波长808 nm半导体连续激光器7808.76
    2020[71]HfO2AlN波长976 nm半导体连续激光器600~130067
    2020[72]BCNSiO2波长1064 nm Nd:YAG连续激光器110018.4
    2020[73]ZrCNCNd:YAG连续激光器1100~118040
    2020[74]SrTiO3MgAl2O4波长1064 nm Nd:YAG连续激光器90020
    2020[75]Y-doped BaZrO3AlN波长1064 nm Nd:YAG连续激光器645.1~656.32.67
    2020[76]β-Yb2Si2O7, X1/X2-Yb2SiO5AlN波长808 nm半导体连续激光器750~1100114~423、353~943
    2019[77]LaPO4Al2O3波长1064 nm Nd:YAG连续激光器802~84758.6
    2019[78]SiBCNGraphite波长1064 nm Nd:YAG连续激光器1210~14101620
    Table 3. Recent reports of thin film deposition using pyrolysis LCVD
    材料基体光源沉积参数
    温度/(°C)速率/(μm/h)
    2020[141]金刚石Si波长532 nm超高斯分布连续激光器700~9000.38
    2019[47]WTFT-LCD波长351 nm脉宽45 ns Nd:YAG脉冲激光器> 450-
    2018[59]金刚石WC波长193 nm脉宽15 ns ArF、波长248 nm脉宽20 ns KrF准分子激光器217711、10.3
    2018[142]β-SiCβ-SiC波长808 nm InGaAlAs半导体激光器1067~125750
    2018[143]Si3N4Si/PET波长193 nm ArF 准分子激光器 1000.93
    2017[144]NiU波长248 nm KrF 准分子激光器 165~200-
    2011[145]Cr2O3Al2O3波长248 nm脉宽30 ns KrF准分子激光器室温360
    Table 4. Reports of thin film deposition using photolysis LCVD recently
    Lisha Fan, Fan Liu, Guolong Wu, S. Kovalenko Volodymyr, Jianhua Yao. Research progress of laser-assisted chemical vapor deposition[J]. Opto-Electronic Engineering, 2022, 49(2): 210333-1
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