• Acta Optica Sinica
  • Vol. 38, Issue 9, 0927001 (2018)
Ran Zeng1、2、*, Jinxin Hou1, Chi Wang1, Qiliang Li1, Meihua Bi1, Guowei Yang1, and Yaping Yang2
Author Affiliations
  • 1 School of Communication Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
  • 2 Key Laboratory of Advanced Micro-Structured Materials of Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
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    DOI: 10.3788/AOS201838.0927001 Cite this Article Set citation alerts
    Ran Zeng, Jinxin Hou, Chi Wang, Qiliang Li, Meihua Bi, Guowei Yang, Yaping Yang. Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness[J]. Acta Optica Sinica, 2018, 38(9): 0927001 Copy Citation Text show less
    TI model. (a) Slab; (b) cavity
    Fig. 1. TI model. (a) Slab; (b) cavity
    Spontaneous emission rate of two-level atoms near TI slab versus slab thickness. (a) Parallel dipole; (b) perpendicular dipole
    Fig. 2. Spontaneous emission rate of two-level atoms near TI slab versus slab thickness. (a) Parallel dipole; (b) perpendicular dipole
    Spontaneous emission rate of two-level atoms near TI slab versus atomic position. (a) Parallel dipole; (b) perpendicular dipole
    Fig. 3. Spontaneous emission rate of two-level atoms near TI slab versus atomic position. (a) Parallel dipole; (b) perpendicular dipole
    Spontaneous emission rate of two-level atoms near TI slab versus slab thickness when dissipation is included. (a) Parallel dipole; (b) perpendicular dipole
    Fig. 4. Spontaneous emission rate of two-level atoms near TI slab versus slab thickness when dissipation is included. (a) Parallel dipole; (b) perpendicular dipole
    Spontaneous emission rate of two-level atoms near TI slab interface versus atomic position. (a) Parallel dipole; (b) perpendicular dipole
    Fig. 5. Spontaneous emission rate of two-level atoms near TI slab interface versus atomic position. (a) Parallel dipole; (b) perpendicular dipole
    Spontaneous emission rate of two-level atoms inside TI slab cavity versus atomic position (inset: corresponding case when dissipation is included). (a) Parallel dipole; (b) perpendicular dipole
    Fig. 6. Spontaneous emission rate of two-level atoms inside TI slab cavity versus atomic position (inset: corresponding case when dissipation is included). (a) Parallel dipole; (b) perpendicular dipole
    Spontaneous emission rate of two-level atoms inside TI slab cavity versus cavity length when dissipation is included (inset: corresponding case when dissipation is ignored). (a) Parallel dipole; (b) perpendicular dipole
    Fig. 7. Spontaneous emission rate of two-level atoms inside TI slab cavity versus cavity length when dissipation is included (inset: corresponding case when dissipation is ignored). (a) Parallel dipole; (b) perpendicular dipole
    Ran Zeng, Jinxin Hou, Chi Wang, Qiliang Li, Meihua Bi, Guowei Yang, Yaping Yang. Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness[J]. Acta Optica Sinica, 2018, 38(9): 0927001
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