• Chinese Journal of Quantum Electronics
  • Vol. 19, Issue 2, 109 (2002)
[in Chinese]1、2, [in Chinese]1, [in Chinese]3, [in Chinese]1, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3Sumita Optical Glass Inc., Saitama 338 Japan
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical Parameters of Ho3+ in Oxyfluoride Glass Ceramic[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 109 Copy Citation Text show less
    References

    [1] Auzel F.Pecile D,Morin D.Rare earth doped vitroceramics: New,efficient blue and green emitting materials for infrared up-conversion [J] .J.Electrochem.Soc.,1975,122:101

    [2] Wang Y,Ohwaki J .New transparent vitroceramics codoped with Er3+ and Yb3+ for efficient frequency upconversion [J].Appl.Phys.Lett.,1993,63:3268

    [3] Judd B R,Optical absorption intensities of rare-earth ions [J].Phys.Rev.,1962,127:750

    [4] Ofelt G S.Intensities of crystal spectra of rare-earth ions [J].J.Chem.Phys.,1962,37:511

    [5] Weber M J,Matsinger B H,Donlan V L et al.Optical transition probabilities for trivalent holmium in LaF3 and YAIO3 [J].J.Chem.Phy.,1972,57:562

    [6] Tanimura K,Shinn M D,Sibley W A et al.Optical transition of Ho3+ ions in fluorozirconate glass [J].Phys.Rev.,1984,30:2429

    [7] Reisfeld R,Jorgensen C K.Lasers and Excited States of Rare Earths [M].New York: Berlin,Heidelberg.SpringerVerlag,1977.

    [8] Carnall W T,Fields P R,Rajnak K.Spectral intensities of the trivalent lanthanides and actinides in solution.Ⅱ.Pm3+,Sm3+,Eu3+,Gd3+,Tb3+,Dy3+,and Ho3+ [J].J.Chem.Phys.,1968,49:4412

    [9] Weber M J.Probabilities for radiative and nonradiative decay of Er3+ in LaF3 [J].Phys.Rev.,1967.157:262

    [10] Caird J A.Characteristics of room-temperature 2.3-μm laser emission from Tm3+in YAG and YAIO3 [J].IEEE J.Quant.Electro.,1975,QE-11:874

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical Parameters of Ho3+ in Oxyfluoride Glass Ceramic[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 109
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