• Laser & Optoelectronics Progress
  • Vol. 58, Issue 17, 1714010 (2021)
Lairong Xiao1, Wei Tan1, Liming Liu2, Huan Wang2, Zhenwu Peng1, and Xiaojun Zhao1、*
Author Affiliations
  • 1School of Materials Science and Engineering, Central South University, Changsha , Hunan 410083, China
  • 2Beijing Power Machinery Research Institute, Beijing 100074, China
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    DOI: 10.3788/LOP202158.1714010 Cite this Article Set citation alerts
    Lairong Xiao, Wei Tan, Liming Liu, Huan Wang, Zhenwu Peng, Xiaojun Zhao. Effect of Post Treatment on the Microstructure and Properties of the GH3536 Alloy Formed by Additive Manufacturing[J]. Laser & Optoelectronics Progress, 2021, 58(17): 1714010 Copy Citation Text show less
    Schematic of scanning strategy of SLM forming
    Fig. 1. Schematic of scanning strategy of SLM forming
    Dimension diagrams of specimen.(a)Tensile specimen;(b)fatigue crack growth specimen
    Fig. 2. Dimension diagrams of specimen.(a)Tensile specimen;(b)fatigue crack growth specimen
    Relative density of GH3536 alloy in different states
    Fig. 3. Relative density of GH3536 alloy in different states
    Microstructures of as-deposited GH3536 alloy. (a) X‒Y plane; (b) (c) X‒Z plane; (d) amplified view of area 1
    Fig. 4. Microstructures of as-deposited GH3536 alloy. (a) X‒Y plane; (b) (c) X‒Z plane; (d) amplified view of area 1
    Microstructures of SLM GH3536 alloy after post treatment. (a) X‒Y plane of HIP state; (b) X‒Z plane of HIP state; (c) X‒Y plane of HIP+ST state; (d) X‒Z plane of HIP+ST state
    Fig. 5. Microstructures of SLM GH3536 alloy after post treatment. (a) X‒Y plane of HIP state; (b) X‒Z plane of HIP state; (c) X‒Y plane of HIP+ST state; (d) X‒Z plane of HIP+ST state
    BSE images and EDS analysis results of SLM GH3536 alloy in different treatment states.(a)Precipitation image of HIP state;(b)precipitation image of HIP+ST state;(c)EDS analysis result of spot 1;(d)EDS analysis result of spot 2;(e)EDS analysis result of spot 3
    Fig. 6. BSE images and EDS analysis results of SLM GH3536 alloy in different treatment states.(a)Precipitation image of HIP state;(b)precipitation image of HIP+ST state;(c)EDS analysis result of spot 1;(d)EDS analysis result of spot 2;(e)EDS analysis result of spot 3
    Mechanical properties of SLM GH3536 in different states.(a)Tensile property at room temperature;(b)Vickers hardness
    Fig. 7. Mechanical properties of SLM GH3536 in different states.(a)Tensile property at room temperature;(b)Vickers hardness
    Fatigue crack growth test results of SLM GH3536 in different states.(a)Crack length versus number of cycles;(b)fatigue crack growth rate curve
    Fig. 8. Fatigue crack growth test results of SLM GH3536 in different states.(a)Crack length versus number of cycles;(b)fatigue crack growth rate curve
    Fatigue crack growth fractography of SLM GH3536 in different states.(a)Paris region of as-deposited alloy;(b)amplified view of area 1;(c)final rupture region of as-deposited alloy;(d)Paris region of HIP+ST alloy;(e)amplified view of area 2;(f)final rupture region of HIP+ST alloy
    Fig. 9. Fatigue crack growth fractography of SLM GH3536 in different states.(a)Paris region of as-deposited alloy;(b)amplified view of area 1;(c)final rupture region of as-deposited alloy;(d)Paris region of HIP+ST alloy;(e)amplified view of area 2;(f)final rupture region of HIP+ST alloy
    ElementCrFeMoCoSiWAlMnCNi
    Mass fraction /%21.5318.749.101.720.610.530.300.0250.062Bal.
    Table 1. Chemical composition of GH3536 alloy powder
    AreaMass fraction /%
    NiCrFeMoCCo
    Spot 147.1221.1218.598.483.371.32
    Spot 238.3721.6816.3415.826.481.31
    Table 2. Chemical composition of some areas in Fig. 3(d)
    Sample stateC /10-11mR2
    As-deposited2.95884.52610.9683
    HIP + ST1.37634.62890.9841
    Table 3. Paris formula fitting results of SLM GH3536 alloy in different states
    Lairong Xiao, Wei Tan, Liming Liu, Huan Wang, Zhenwu Peng, Xiaojun Zhao. Effect of Post Treatment on the Microstructure and Properties of the GH3536 Alloy Formed by Additive Manufacturing[J]. Laser & Optoelectronics Progress, 2021, 58(17): 1714010
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