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Journals >Journal of Semiconductors >Volume 44 >Issue 8 >Page 082802 > Article

Journal of Semiconductors
Vol. 44, Issue 8, 082802 (2023)

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

Amgad A. Al-Saman^1,2, Eugeny A. Ryndin³, Xinchuan Zhang², Yi Pei^2,*, and Fujiang Lin^1,**

Author Affiliations

¹School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

²Dynax Semiconductor Inc., Suzhou 215300, China

³Department of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University, Saint Petersburg 197376, Russia

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DOI: 10.1088/1674-4926/44/8/082802 Cite this Article

Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8): 082802 Copy Citation Text

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References

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[8] K Jena, R Swain, T R Lenka. Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT. Int J Numer Model Electron Netw Devices Fields, 30, e2117(2017).

[9] S Khandelwal, Y S Chauhan, T A Fjeldly. Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices. IEEE Trans Electron Devices, 59, 2856(2012).

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[13] T Sadi, R W Kelsall, N J Pilgrim. Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method. IEEE Trans Electron Devices, 53, 2892(2006).

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[16] E A Ryndin, A Al-Saman. A novel approach to model high-speed microelectronic switch on the basis of hydrodynamic approximation. International Conference on Micro- and Nano-Electronics 2018, 128(2019).

[17] X D Wang, W D Hu, X S Chen et al. The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs. IEEE Trans Electron Devices, 59, 1393(2012).

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Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8): 082802

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