Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8): 082802
- Journal of Semiconductors
- Vol. 44, Issue 8, 082802 (2023)
Fig. 1. (Color online) Cross-section of considered GaN/AlGaN HEMT transistor.
Fig. 2. (Color online) The Electron concentration distribution within the gated region of GaN HEMT at Vg = 1 V and swept Vd from 0 to 5 V. In the figure, x denotes the distance along the channel.
Fig. 3. (Color online) Electron concentration distribution within the gated region of GaN HEMT at Vg = 0 V and swept Vd from 0 to 5 V. In the figure, x denotes the distance along the channel.
Fig. 4. (Color online) Electron concentration distribution within the gated region of GaN HEMT at Vg = –1 V and swept Vd from 0 to 5 V. In figure, x denotes the distance along the channel.
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Table 1. Geometrical and simulation parameters of considered GaN/AlGaN HEMT transistor.
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