[1] Verie C, Raymond F. Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe Alloys [J], Journal of Crystal Growth, 1982, 59: 342-346.

[2] Chen A, Sher A. CPA band calculation for HgCdTe [J], Journal of Vacuum Science & Technology, 1982, 21(1): 138-141.

[3] Lecoy G P, Orsal B, Alabedra R. Impact ionization resonance and auger recombination in Hg1-xCdx Te (0.6<x<0.7) [J], IEEE Journal of Quantum Electronics, 1987, QE-23(7): 1145-1153.

[4] Reine M B, Marciniec J W, Wong K K, et al. Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes [J]. Journal of Electronic Materials, 2008, 37(9): 1376-1386.

[5] Perrais G, Gravrand O, Baylet J, et al. Gain and dark current characteristics avalanche photo diodes [J], Journal of Electron Materials, 2007, 36: 963.

[6] Leveque G, Nassert M, Bertho D, et al. Ionization energies in CdHgTe avalanche photodiodes [J], Semiconductor Science Technology, 1993, 8: 1317-1323.

[7] Beck J, Wan C, Kinch M, et al. The HgCdTe electron avalanche photodiode [J], Journal of Electronic Materials, 2006, 35(6): 1166-1173.

[8] de Lyon T J, Baumgratz B, Chapman G, et al. MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetection [J]. Journal of Crystal Growth, 1999, 201/202: 980-984.

[9] Kinch M A, Beck J D, Wan C F, et al. HgCdTe electron avalanche photodiodes [J], Journal of Electronic Materials 2004, 33(6): 630-639.

[10] Stratton R. The influence of interelectronic collisions on conduction and breakdown in polar crystals [J], Proceedings of the Royal Society A, 1958, 246: 406-422.

[11] Kinch M A. A theoretical model for the HgCdTe electron avalanche photodiode [J], Journal of Electronic Materials, 2008, 37(9): 1453-1459.

[12] labedra R, Orasl B, Lecoy G, et al. An HgCdTe avalanche photodiode for optical-fiber transmission systems at λ=1.3μm [J], IEEE Transactions on Electron Devices, 1985, 32(7): 1302-1306.