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Journal of Infrared and Millimeter Waves
Contents
2013
Volume: 32 Issue 2
20 Article(s)
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Research Article
Effects of deposition parameters on Cd
1-x
Zn
x
Te films prepared by RF magnetron sputtering
CAO Hong, CHU Jun-Hao, WANG Shan-Li, WU Yun-Hua, and ZHANG Chuan-Jun
Cd1-xZnx Te films were deposited by RF magnetron sputtering from Cd0.96 Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotomet
Cd1-xZnx Te films were deposited by RF magnetron sputtering from Cd0.96 Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 97 (2013)
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150 GHz and 180 GHz fixed-tuned frequency multiplying sources with planar Schottky diodes
YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, WANG Yi-Gang, and XU Cong-Hai
We report on the design and evaluation of two frequency bandwidth multiplying sources with planar Schottky diodes mounted on quartz thin film circuit. Novel co-simulation approach is used. Full-wave analysis is utilized to find diode deembedding impedances with lumped port to model the nonlinear junction. The doubler c
We report on the design and evaluation of two frequency bandwidth multiplying sources with planar Schottky diodes mounted on quartz thin film circuit. Novel co-simulation approach is used. Full-wave analysis is utilized to find diode deembedding impedances with lumped port to model the nonlinear junction. The doubler circuit is divided into several matching parts for ease of design. Individual parts of the doubler are independently designed and then these parts are combined and optimized simultaneously. The exported S-parameters of the whole circuit are used for multiplying efficiency analysis. For the 150 GHz doubler, the highest measured efficiency is 7.5% at 149.2 GHz and the typical efficiency is 6.0% in 147.4~152 GHz. As for the 180 GHz doubler, the highest measured efficiency is 14.8% at 170 GHz and the typical value in 150~200 GHz is 8.0%..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 102 (2013)
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Efficient THz generation via stimulated Raman adiabatic passage
SHI Hua-Feng, YU Wen-Long, YU Fei, and JIN Lei
A THz generation via stimulated Raman adiabatic passage in three-level Λ system was demonstrated. The basic model and theory had been analyzed in three levels coherent with pump laser and THz generation. The application also had been mentioned in D2O molecules optically pumped by a TEA CO2 laser. It produced THz radiat
A THz generation via stimulated Raman adiabatic passage in three-level Λ system was demonstrated. The basic model and theory had been analyzed in three levels coherent with pump laser and THz generation. The application also had been mentioned in D2O molecules optically pumped by a TEA CO2 laser. It produced THz radiation at the wavelength of 385 μm. The power of the THz pulse as a function of the vapor pressure, and a maximum THz power had been obtained. It was displayed that this technology is a robustness method of THz source..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 108 (2013)
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Spectroscopic and electrial properties of manganese cobalt nickelate copper films prepared by chemical depopition
ZHANG Yan, HUANG Zhi-Ming, HOU Yun, ZHOU Wei, and CHU Jun-Hao
Thin thermistor films of Mn1.56Co(0.96-x)Ni0.48CuxO4 with spinel structure were prepared on amorphous Al2O3 substrate by chemical solution deposition method at a temperature of 750 ℃ in air, which is much lower than the traditional sintered temperature of 1100 ℃. The X-ray diffraction indicates that with the increase c
Thin thermistor films of Mn1.56Co(0.96-x)Ni0.48CuxO4 with spinel structure were prepared on amorphous Al2O3 substrate by chemical solution deposition method at a temperature of 750 ℃ in air, which is much lower than the traditional sintered temperature of 1100 ℃. The X-ray diffraction indicates that with the increase copper content, the preferred direction of crystalline is different under the same growth condition, but these films keep spinel structure well with increased crystallinity. The calculation of the grain size for all films have been performed by using the Scherrer’s equation, and we found that the grain size increased with the increase of the content of Cu.Scanning electron microscope (SEM) analysis showed that their surfaces were smooth and dense, free from cracks. The values of characteristic temperature T0, activation energy E and NTC(Negative Temperature Coefficient)α(295K) for Mn1.56Co(0.96-x)Ni0.48CuxO4 films were obtained from their electrical properties. The result revealed that a lower Cu component corresponded to a higher value of α.Increasing Cu constituent,α decreased from -4.12% to -3.29%. The extinction coefficients of this films were determined by spectroscopic ellipsometry(SE) and their extinction coefficient peaks were identified..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 113 (2013)
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Characterization of the lattice mismatched In
0.68
Ga
0.32
As Material Grown on InP substrate by MOCVD
ZHU Ya-Qi, CHEN Zhi-Ming, LU Shu-Long, JI Lian, ZHAO Yong-Ming, and TAN Ming
The lattice mismatched In0.68 Ga0.32 As materials were grown on InP substrate by MOCVD technology. InAsxP1-x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and strain offset buffer structure , In this way, we got a strain relaxed InAsxP1
The lattice mismatched In0.68 Ga0.32 As materials were grown on InP substrate by MOCVD technology. InAsxP1-x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and strain offset buffer structure , In this way, we got a strain relaxed InAsxP1-x "virtual" substrate, which is lattice matched to In0.68 Ga0.32 As .With an optimized thickness of the buffer layer,the strain was completely relaxed in the "virtual" substrate. The analysis of AFM, HRXRD ,TEM and photoluminescence(PL) indicated that this method can effectively improve the quality of the In0.68 Ga0.32 As material..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 118 (2013)
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Stress effects on multi-heterostructure HgCdTe by thermal annealing
SHEN Chuan, GU Ren-Jie, CHEN Lu, and HE Li
With the rapid development in larger-area HgCdTe infrared detector device, high-quality HgCdTe epilayers grown by molecular beam epitaxy (MBE) are required. One of its challenges is to reduce the high dislocation density in HgCdTe. In this paper, thermal annealing (TA) had been performed and the best annealing temperat
With the rapid development in larger-area HgCdTe infrared detector device, high-quality HgCdTe epilayers grown by molecular beam epitaxy (MBE) are required. One of its challenges is to reduce the high dislocation density in HgCdTe. In this paper, thermal annealing (TA) had been performed and the best annealing temperature and time have been acquired. A series of researches were performed to study the effects of the CdTe passivation layer over HgCdTe on dislocation reduction after thermal annealing. The relation of lattice mismatch stress and thermal stress in HgCdTe layer in the TA process was studied by theoretical calculation. Reciprocal space of X-ray rocking curve of HgCdTe was also analyzed. It explained the different phenomena of HgCdTe epilayer with and without CdTe cap in the TA process..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 122 (2013)
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The influence of La content on photovoltaic effect of PZT thin films
SUN Qian, DENG Hong-Mei, YANG Ping-Xiong, and CHU Jun-Hao
The polycrystalline thin films of (Pb1-xLax)(Zr0.52Ti0.48)1-x/4O3 (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600 ℃. This is
The polycrystalline thin films of (Pb1-xLax)(Zr0.52Ti0.48)1-x/4O3 (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600 ℃. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%. It reaches a maximum there and then decreases when the La content is increased furthermore..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 128 (2013)
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Electrical properties of a MIS structure consisting of AOF/ZnS and LWIR HgCdTe film
WANG Ni-Li, LIU Shi-Jia, LAN Tian-Yi, ZHAO Shui-Ping, and LI Xiang-Yang
The semiconductor-passivating layer interface, as well as the dielectric properties of the passivator, plays an important role in HgCdTe based photoelectric detectors. Anodization is commonly used as a surface passivator for HgCdTe. ZnS is deposited on the AOF (anodic-oxide film) as antireflecting layer. The electrical
The semiconductor-passivating layer interface, as well as the dielectric properties of the passivator, plays an important role in HgCdTe based photoelectric detectors. Anodization is commonly used as a surface passivator for HgCdTe. ZnS is deposited on the AOF (anodic-oxide film) as antireflecting layer. The electrical properties of the interface between AOF/ZnS and LWIR bulk HgCdTe materials were determined by capacitance-voltage (C-V) measurements in the frequency range of 10 KHz-10 MHz in the metal insulator semiconductor (MIS) structures. The results showed that the MIS detector could not reach the high frequency level even at frequencies up to 10 MHz in the case where the interfacial state densities were 3.4×1011 cm-2q-1V-1. The fixed charges were 1.1×1012cm-2. The surface recombination velocity at the interface of AOF/ZnS and LWIR HgCdTe was 700cm/s. The variation of C-V properties with temperature has been obtained and analyzed..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 132 (2013)
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MBE growth HgCdTe avalanche photodiode based on PIN structure
GU Ren-Jie, SHEN Chuan, WANG Wei-Qiang, FU Xiang-Liang, GUO Yu-Ying, and CHEN Lu
Hg1-xCdxTe (x=0.3) avalanche photodiodes (APDs) with a PIN structure was investigated theoretically. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. The gain as well as the breakdown voltage of the device was obtained. The composition, thickness, doping level
Hg1-xCdxTe (x=0.3) avalanche photodiodes (APDs) with a PIN structure was investigated theoretically. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. The gain as well as the breakdown voltage of the device was obtained. The composition, thickness, doping level were optimized theoretically for the APD device. A high performance APD device with a gain of 335 at the bias voltage of-10V was fabricated, which consisted of a PIN structure mad of HgCdTe grown by MBE..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 136 (2013)
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Antilocalization effect in HgCdTe film
WEI Lai-Ming, LIU Xin-Zhi, YU Guo-Lin, GAO Kuang-Hong, WANG Qi-Wei, LIN Tie, GUO Shao-Ling, WEI Yan-Feng, YANG Jian-Rong, HE Li, DAI Ning, and CHU Jun-Hao
The antilocalization effect is observed by magnetotransport measurement at low temperature on a Hg0.77Cd0.23 Te sample prepared by liquid epitaxy technique, which suggests a strong spin-orbit interaction within this system. The phase coherence time and spin-orbit scattering time of electrons are extracted by fitting th
The antilocalization effect is observed by magnetotransport measurement at low temperature on a Hg0.77Cd0.23 Te sample prepared by liquid epitaxy technique, which suggests a strong spin-orbit interaction within this system. The phase coherence time and spin-orbit scattering time of electrons are extracted by fitting the experiment data with the Hikami-Larkin-Nagaoka (HLN) theory plus the Drude conductance model. According to the temperature dependence of phase coherence time, we also find that the Nyquist mechanism dominates the dephasing process..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 141 (2013)
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Band gap determination of HgCdTe by ultra high vacuum scanning tunneling spectroscopy
REN Xiu-Rong, and ZHA Fang-Xing
In contrast to conventional band gap determination of Hg1-xCdxTe by low- temperature Fourier transform spectroscopy, we report the application of tunneling spectroscopy (STS) technique to measure the energy band gap of the vacancy-doped P-Hg1-xCdxTe grown by liquid-phase epitaxy (LPE) method. The apparent zero-current
In contrast to conventional band gap determination of Hg1-xCdxTe by low- temperature Fourier transform spectroscopy, we report the application of tunneling spectroscopy (STS) technique to measure the energy band gap of the vacancy-doped P-Hg1-xCdxTe grown by liquid-phase epitaxy (LPE) method. The apparent zero-current gaps measured by current-voltage tunneling spectroscopy are influenced by the imaging bias. However, the real energy band gap can be revealed by the normalized differential tunneling conductance, which were obtained using the lock-in amplifier technique. The results indicate the feasibility of room temperature band gap determination by the STS technique..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 145 (2013)
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THz-TDS spectra study of polymer materials with different polarity
CHEN Xi-Liang, CHEN Xin, and ZHU Zhi-Yong
To exploring the effect of polarity on dielectric properties of polymers, the absorption and dispersion characteristics of 5 polymers (high density polyethylene (HDPE), polyethylene terephthalate (PET), polyurethane (PU), polyvinylpyrrolidone (PVP), polyvinylidene fluoride (PVDF)) in terahertz band were studied with te
To exploring the effect of polarity on dielectric properties of polymers, the absorption and dispersion characteristics of 5 polymers (high density polyethylene (HDPE), polyethylene terephthalate (PET), polyurethane (PU), polyvinylpyrrolidone (PVP), polyvinylidene fluoride (PVDF)) in terahertz band were studied with terahertz time-domain spectroscopy (THz-TDS). Theoretical analysis was conducted by fitting the experimental results to Debye formula. It was demonstrated from the study that dipolar polarization occurred and was enhanced with the increase of the polymer polarity, which is responsible for the increment of absorption coefficient (α), imaginary part of dielectric constant (ε") and relaxation strength (Δε). It was known that the relaxation of dipole following behind the periodical variety of THz electric field was due to the medium damping effect. As a result, abnormal dispersion behavior happened. It was found that both the refractive index (n) and the real part of dielectric constant (ε')was decreased with the increase of frequency. The relaxation time (τ) obtained from Debye fitting was also found to increase significantly with the dipole size and the rigidity of molecular..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 150 (2013)
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Fabrication and application of high aspect ratio metallic gratings for sensing in the mid-infrared region
ZHENG Gai-Ge, CHEN Yun-Yun, XU Lin-Hua, and LAI Min
A method for fabricating high aspect ratio (HAR) metallic gratings using nanoimprint together with sputtering and reactive-ion etching (RIE) was introduced. The reflection spectrum is measured by Fourier transform infrared (FTIR) spectrometer in the mid-infrared (Mid-IR) region. The reflection peaks will appear just wh
A method for fabricating high aspect ratio (HAR) metallic gratings using nanoimprint together with sputtering and reactive-ion etching (RIE) was introduced. The reflection spectrum is measured by Fourier transform infrared (FTIR) spectrometer in the mid-infrared (Mid-IR) region. The reflection peaks will appear just when the p-polarized light incident normally to the grating vector direction, which is very similar to the phenomenon of surface plasmon resonance. This is the so-called spoof surface plasmon resonance (SSPR). Theoretical analysis based on rigorous coupled wave showed that spoof surface plasmon resonance is very sensitive to the change of refractive index in the surface of the metal. Thus this phenomenon has its potential use as a refractive index sensor. In addition, the shift of resonance wavelength with the refractive index of the metal surface is completely linear. The refractive index sensitivity of the Mid-IR SPR sensor are predicted to be 1600 nm per refractive index unit (1600 nm/RIU) and 5000 nm/RIU for the positive and negative order diffractive waves, respectively. The corresponding figure of merits of the whole system is predicted to be 20 RIU-1 and 60 RIU-1, respectively. The list of applicable target materials will certainly expand greatly if mid-IR SPR-based sensors are developed..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 154 (2013)
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Extraction of refractive indices of materials through transmission terahertz time-domain spectroscopy
CHEN Li-Qun, GAO Fei, GONG Xiao-Jing, YANG Jun, LU Yuan-Pu, LIU Wen-Quan, FENG Guang-Zhi, ZHANG Yan-Dong, JIN Lei, and YU Wen-Long
For samples with distinguishable echoes in detected transmission pulses, we mainly use the phase difference between the detected pulses to extract their refraction indices by transmission terahertz time-domain spectroscopy. Specifically, there are two methods. The first one requires the reference pulse and the first te
For samples with distinguishable echoes in detected transmission pulses, we mainly use the phase difference between the detected pulses to extract their refraction indices by transmission terahertz time-domain spectroscopy. Specifically, there are two methods. The first one requires the reference pulse and the first terahertz pulse transmitted through the sample; the second one requires the terahertz pulse transmitted through the sample and the second transmitted pulse after two reflections in the sample. However, in practice, there exists an angle between the incident terahertz beam and the surface normal of the sample. Yet, this angle is not easy to measure. So, in calculation we usually ignore this angle, which often causes error in the extracted refractive indices. In addition, this error is related with the selected method. In this article, after analyzing deviations of the refractive indices resulting from the angle when using the two methods, we propose a method to correct the extracting refractive indices. Our method could theoretically eliminate errors that are caused by the angle. Experiments further prove that this correction method is effective..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 160 (2013)
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MEMS rectangular waveguide filter at 140 GHz
ZHAO Xing-Hai, SHAN Guang-Cun, ZHENG Ying-Bin, DU Yi-Jia, CHEN Ying-Hui, BAO Jing-Fu, and SU Wei
The D-band MEMS rectangular waveguide iris filter was designed and fabricated. The effects of thicknesses of both metalized layer and iris, and their roughness on the performances of the filter were investigated. The prototypes were fabricated using DRIE method. Several techniques including deep etching, electroplating
The D-band MEMS rectangular waveguide iris filter was designed and fabricated. The effects of thicknesses of both metalized layer and iris, and their roughness on the performances of the filter were investigated. The prototypes were fabricated using DRIE method. Several techniques including deep etching, electroplating and bonding were employed for the fabrication of the filter. The MEMS waveguide iris filter with a central frequency of (140±3) GHz, insert loss 0.4-0.7dB, and isolation larger than 18dB has been accomplished for the first time. The test results were in agreement with the simulations..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 165 (2013)
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Block effect simulation for image registration in remote sensing
WANG Yu-Xi, GU Xing-Fa, JEAN Sequeira, YU Tao, YE Ze-Tian, MENG Qing-Yan, and LI Li
A novel method for random RS image simulation was proposed and realized. By integrating PROSAIL model, random classes of ground object and scale extension, random point image and random block image were simulated, respectively. In the experiment, several images, including HJ-1 CCD near infrared red spectral band image
A novel method for random RS image simulation was proposed and realized. By integrating PROSAIL model, random classes of ground object and scale extension, random point image and random block image were simulated, respectively. In the experiment, several images, including HJ-1 CCD near infrared red spectral band image and the images with different translation, rotation and scale parameters, were quantitatively simulated. With the help of these simulated images, the effect to NIR image registration from the differences of translation, rotation and scale parameters was discussed. The action of block effect in the NIR image registration was analyzed through simulated random block images with scale diversifications and random distribution of ground object. Simulating random remote sensing images were used to analyze NIR image registration. The experimental results show that the block effect in image takes an important role to image registration..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 170 (2013)
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A method for fabricating free-standing polarizer grids for W-band
ZHANG Yong-Fang, MIAO Jun-Gang, and JIANG Jing-Shan
This paper demonstrates the designing and fabrication process of a W-wave polarizer with fine metal wires. The wires were designed to be 100 μm in diameter and 300 μm between each other. The mean values of these two parameters of the fabricated wire are 100.3 μm and 300.2 μm, with the standard deviations 5.2 μm and 8.3
This paper demonstrates the designing and fabrication process of a W-wave polarizer with fine metal wires. The wires were designed to be 100 μm in diameter and 300 μm between each other. The mean values of these two parameters of the fabricated wire are 100.3 μm and 300.2 μm, with the standard deviations 5.2 μm and 8.3 μm respectively. Results show that the polarization grid has high fabrication precision and uniformity, and the polarizer surface flatness is better than 30 μm. In addition, the power transmission coefficient was measured. The actual measurement results and theoretical calculation results agree with each other perfectly. The polarizer fabricated by this new method has excellent performance..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 176 (2013)
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A time-domain diffuse fluorescence and optical tomography system for breast tumor diagnosis
ZHANG Wei, GAO Feng, WU Lin-Hui, MA Wen-Juan, LU Yi-Ming, and ZHAO Hui-Juan
Aiming at enhancing the reliability of breast diffuse optical tomography, a combined time-domain diffuse fluorescence and optical tomography system is proposed based on the multi-channel time-correlated single-photon counting technique. Aligning 32 coaxial fibers around the tissue surface equally; the system scans obje
Aiming at enhancing the reliability of breast diffuse optical tomography, a combined time-domain diffuse fluorescence and optical tomography system is proposed based on the multi-channel time-correlated single-photon counting technique. Aligning 32 coaxial fibers around the tissue surface equally; the system scans objects in a parallel-beam mode analogous to X-ray CT so that the time-resolved projections at different incident positions can be obtained. By applying the relevant iteration reconstruction algorithm, promising images have been produced from measurements on different phantoms. The results indicate this system works reliably and is one of the ideal platforms for optical breast tumor diagnosis..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 181 (2013)
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Design of a new type broad-band output window for high power gyro-TWT
XU Yong, LUO Yong, LI Hong-Fu, XIONG Cai-Dong, and WANG Jian-Xun
A sort of universal theoretical analysis method for multilayer dielectric window was presented by using the mode-matching technique to build scattering matrix. The analysis of output window for high power millimeter-wave gyro-TWT was prosecuted. Based on academic analysis and numerical calculations , the primitive stru
A sort of universal theoretical analysis method for multilayer dielectric window was presented by using the mode-matching technique to build scattering matrix. The analysis of output window for high power millimeter-wave gyro-TWT was prosecuted. Based on academic analysis and numerical calculations , the primitive structure and geometric parameters of the output window had been obtained. Afterward, HFSS code is used to simulate accurately and revise approximate analysis. Through a large number of thermodynamic analysis and optimization design, the wide-band output windows of Ka-band , with average power capability 50 kW and band width about 3.6 GHz when S11 parameters less than -20 dB , were attained. The cold test indicates that the results of design are in agreement with the results of cold test..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 187 (2013)
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 32, Issue 2, 1 (2013)
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