Researching | Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices

Journals >Chinese Optics Letters >Volume 17 >Issue 2 >Page 020010 > Article

Chinese Optics Letters
Vol. 17, Issue 2, 020010 (2019)

Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices

Jimin Shang¹, Shuai Zhang², Yongqiang Wang¹, Hongyu Wen^3、*, and Zhongming Wei³

Author Affiliations

¹School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou 453002, China

²College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China

³State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201917.020010 Cite this Article Set citation alerts

Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei. Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices[J]. Chinese Optics Letters, 2019, 17(2): 020010 Copy Citation Text

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Data from CrossRef

[1] Yanxing Zhang, Zongxian Yang. Efficient band structure engineering and visible-light response in ZrS2/GaS heterobilayer by electrical field or external strains. Physics Letters A(2019).

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Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei. Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices[J]. Chinese Optics Letters, 2019, 17(2): 020010

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