• Infrared and Laser Engineering
  • Vol. 51, Issue 12, 20220150 (2022)
Chaowei Yang, Peng Zhao, Wei Huang, Qiang Qin, Tianying He, Hongfu Li, Tongjun Pu, Yanzhen Liu, Bojun Xiong, and Lihua Li*
Author Affiliations
  • Kunming Institute of Physics, Kunming 650223, China
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    DOI: 10.3788/IRLA20220150 Cite this Article
    Chaowei Yang, Peng Zhao, Wei Huang, Qiang Qin, Tianying He, Hongfu Li, Tongjun Pu, Yanzhen Liu, Bojun Xiong, Lihua Li. Research on high operating temperature p-on-n medium wave mercury cadmium telluride infrared focal plane device[J]. Infrared and Laser Engineering, 2022, 51(12): 20220150 Copy Citation Text show less
    References

    [1] A Rogalsk, P Martyniuk, M Kopytko, et al. Trends in performance limits of the HOT infrared photodetectors. Appl Sci, 11, 501(2021).

    [2] T Ashley, C Ellott. Non-equilibrium devices for infrared detection. Electron Lett, 21, 451-452(1985).

    [3] Pillans L, Baker I, Mcewen R. Ultralow power HOT MCT grown by MOVPE f hheld applications [C]Proceedings of SPIE, 2014, 9070: 407418.

    [4] Schaake H, Kinch M, Strong R, et al. High operating temperature MWIR detects [C]Proceedings of SPIE, 2010, 7608: 907919.

    [5] Luttz H, Breiter R, Eich D, et al. High operating temperature IRmodules with small pitch f SWaP reduction high perfmance applications [C]Proceedings of SPIE, 2011, 8185: 342349.

    [6] BllonLanfrey D, Tribolet P, Pistone F, et al. New IR detects with small pixel pitch high operating temperature [C]Proceedings of SPIE, 2010, 7854: 128138.

    [7] D Lee, M Carmody, E Piquette, et al. High-operating temperature HgCdTe: A vision for the near future. J Electron Mater, 45, 4587-4595(2016).

    [8] Z Yang, B Zhang, Y Du, et al. A study of manufacture HgCdTe HOT MW infrared detector. Laser & Infrared, 49, 204-208(2019).

    [9] H Chen, C Shi, S Hu, et al. Study on p-on-n technology of the MWIR HgCdTe for hot work. Laser & Infrared, 50, 435-438(2020).

    [10] L Mollard, G Destefanis, G Bourgeois, et al. Status of p-on-n arsenic-implanted HgCdTe technologies. J Electron Mater, 40, 1830-1839(2011).

    [11] S Shin, J Arias, M Zandian, et al. Enhanced arsenic diffusion and activation in HgCdTe. J Electron Mater, 24, 609-615(1995).

    [12] C Lobre, D Jalabert, I Vickridge, et al. Quantitative damage depth profiles in arsenic implanted HgCdTe. Nucl Instrum Meth B, 313, 76-80(2013).

    [13] X Du, G Savich, B Marozas, et al. Suppression of lateral diffusion and surface leakage currents in nBn photodetectors using an inverted design. J Electron Mater, 47, 1038-1044(2018).

    [14] D Chandra, M Goodwin, M Chen, et al. Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and Hg pressure: Tuning of p on n double layer heterojunction diode properties. J Electron Mater, 24, 599-608(1995).

    [15] W Tennant, D Lee, M Zandian, et al. MBE HgCdTe technology: A very general solution to IR detection, described by "Rule-07", a very convenient heuristic. J Electron Mater, 37, 1406-1410(2008).

    [16] W Tennant. “Rule-07” revisited: Still a good Heuristic predictor of p/n HgCdTe photodiode performance?. J Electron Mater, 39, 1030-1035(2010).

    Chaowei Yang, Peng Zhao, Wei Huang, Qiang Qin, Tianying He, Hongfu Li, Tongjun Pu, Yanzhen Liu, Bojun Xiong, Lihua Li. Research on high operating temperature p-on-n medium wave mercury cadmium telluride infrared focal plane device[J]. Infrared and Laser Engineering, 2022, 51(12): 20220150
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