Chaowei Yang, Peng Zhao, Wei Huang, Qiang Qin, Tianying He, Hongfu Li, Tongjun Pu, Yanzhen Liu, Bojun Xiong, Lihua Li. Research on high operating temperature p-on-n medium wave mercury cadmium telluride infrared focal plane device[J]. Infrared and Laser Engineering, 2022, 51(12): 20220150
- Infrared and Laser Engineering
- Vol. 51, Issue 12, 20220150 (2022)
Fig. 1. Cross-sectionals view of HgCdTe p-on-n device
Fig. 2. SIMS As concentration profiles before (black line) and after (red line) Hg anealing
Fig. 3. I -V curve characteristics of HgCdTe p-on-n device
Fig. 4. Infrared spectrum curve of p-on-n HgCdTe device
Fig. 5. Signal response diagram of p-on-n MWIR HgCdTe focal plane device
Fig. 6. NETD histogram of MWIR p-on-n HgCdTe focal plane device
Fig. 7. NETD of p-on-n MWIR HgCdTe focal plane device from 80 K to 200 K
Fig. 8. Blind element distribution of MWIR HgCdTe p-on-n focal plane device from 80 K to 180 K
Fig. 9. Array operability of MWIR HgCdTe p-on-n focal plane device from 80 K to 200 K
Fig. 10. Dark current of the device operating within 150-200 K (a) and the comparison of dark current operating under 150 K and photocurrent of blackbody at different temperatures (b)
Fig. 11. Dark current and photocurrent for 300 K blackbody of the device operating within 150-200 K
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