Yingxu Zhang, Xiao Chen, Lihua Li, Peng Zhao, Jun Zhao, Xuefeng Ban, Hongfu Li, Xiaodan Gong, Jincheng Kong, Jianhua Guo, Xiongjun Li. Evaluation and application of HgCdTe linear avalanche focal plane devices (invited)[J]. Infrared and Laser Engineering, 2023, 52(3): 20220698
- Infrared and Laser Engineering
- Vol. 52, Issue 3, 20220698 (2023)
Fig. 1. Variation of gain and excess noise factor of the HgCdTe APD with bias
Fig. 2. Gain grayscale map of HgCdTe APD focal plane at −8.6 V
Fig. 3. Excess noise factor histogram of APD focal plane at M =166
Fig. 4. Variation of NEPh with bias under different integration time
Fig. 5. Schematic diagram of the noise of a APD device versus its gain
Fig. 6. Variation of excess noise factor of semiconductor APD devices with gain[17]
Fig. 7. Schematic diagram of the thermal imaging/laser gating combined imaging system
Fig. 8. Infrared passive and active laser combined imaging system with one detector
Fig. 9. Images acquired by a dual-mode camera
Fig. 10. Schematic diagram of readout circuit for 3D imaging
Fig. 11. Schematic diagram of an active imaging system witha APD device
Fig. 12. Variation of photocurrent with distance without APD gain
Fig. 13. Passive mid-band infrared images obtained by Sofradir using a 320×256 (pixel spacing 30 μm) HgCdTe APD device. （a） Routine imaging，SNR =61 dB; (b) Image with short integration time, SNR =39 dB; (c) Image with high gain and short integration time, SNR =42 dB
Fig. 14. Dark current variation of HgCdTe APD with bias
Fig. 15. Passive mid-wave infrared images obtained under different gains by HgCdTe-APD. （a） M =1, the integration time is 800 μs;（b） M =1, the integration time is 20 μs; （c） M =19, the integration time is 20 μs
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Table 1. Performance comparison of different types of linear mode APD detectors reported publicly
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Table 2. Performance comparison of APD avalanche devices fabricated from different material[20]
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Table 3. System parameters
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