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Photonics Research
Vol. 5, Issue 2, A30 (2017)

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

Anna Kafar^1、*, Szymon Stanczyk¹, Marcin Sarzynski¹, Szymon Grzanka^1、2, Jakub Goss¹, Irina Makarowa², Anna Nowakowska-Siwinska², Tadek Suski¹, and Piotr Perlin^1、2

Author Affiliations

¹Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

²TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland

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DOI: 10.1364/PRJ.5.000A30 Cite this Article Set citation alerts

Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter[J]. Photonics Research, 2017, 5(2): A30 Copy Citation Text

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References

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[9] K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, P. Perlin. Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures. J. Appl. Phys., 108, 013110(2010).

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[11] A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, P. Perlin. High-optical-power InGaN superluminescent diodes with “j-shape” waveguide. Appl. Phys. Express, 6, 092102(2013).

[12] C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, B. S. Ooi. High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Opt. Lett., 41, 2608-2611(2016).

[13] A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, N. Grandjean. GaN-based superluminescent diodes with long lifetime. Proc. SPIE, 9748, 97481V(2016).

[14] A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, P. Perlin. Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate. Opt. Express, 24, 9673-9682(2016).

[15] M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, M. Leszczynski. Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning. Appl. Phys. Express, 5, 021001(2012).

[16] S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, P. Perlin. Graded-index separate confinement heterostructure InGaN laser diodes. Appl. Phys. Lett., 103, 261107(2013).

[17] P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, T. Suski. Monolithic cyan—violet InGaN/GaN LED array. Phys. Status Solidi A.

[18] A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, P. Perlin. Design and optimization of InGaN superluminescent diodes. Phys. Status Solidi A, 212, 997-1004(2015).

CLP Journals

[1] A. Kafar, A. Sakaki, R. Ishii, S. Stanczyk, K. Gibasiewicz, Y. Matsuda, D. Schiavon, S. Grzanka, T. Suski, P. Perlin, M. Funato, Y. Kawakami. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction[J]. Photonics Research, 2021, 9(3): 299

[2] Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note[J]. Photonics Research, 2018, 6(6): 652

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Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter[J]. Photonics Research, 2017, 5(2): A30

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