InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

Anna Kafar; Szymon Stanczyk; Marcin Sarzynski; Szymon Grzanka; Jakub Goss; Irina Makarowa; Anna Nowakowska-Siwinska; Tadek Suski; Piotr Perlin

doi:10.1364/PRJ.5.000A30

Journals >Photonics Research >Volume 5 >Issue 2 >Page A30 > Article

Photonics Research
Vol. 5, Issue 2, A30 (2017)

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

Anna Kafar^1、*, Szymon Stanczyk¹, Marcin Sarzynski¹, Szymon Grzanka^1、2, Jakub Goss¹, Irina Makarowa², Anna Nowakowska-Siwinska², Tadek Suski¹, and Piotr Perlin^1、2

Author Affiliations

¹Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

²TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland

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DOI: 10.1364/PRJ.5.000A30 Cite this Article Set citation alerts

Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter[J]. Photonics Research, 2017, 5(2): A30 Copy Citation Text

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