GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang; Dawei Yan; Guosheng Wang; Feng Xie; Guofeng Yang; Shaoqing Xiao; Xiaofeng Gu

doi:10.3788/col201412.092301

Journals >Chinese Optics Letters >Volume 12 >Issue 9 >Page 092301 > Article

Chinese Optics Letters
Vol. 12, Issue 9, 092301 (2014)

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang¹, Dawei Yan¹, Guosheng Wang², Feng Xie², Guofeng Yang¹, Shaoqing Xiao¹, and Xiaofeng Gu¹

Author Affiliations

¹Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, Jiangsu, China

²The 38th Research Institute of China Electronics Technology Group Corporation, Hefei 230088, China

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DOI: 10.3788/col201412.092301 Cite this Article Set citation alerts

Hongjuan Huang, Dawei Yan, Guosheng Wang, Feng Xie, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu. GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates[J]. Chinese Optics Letters, 2014, 12(9): 092301 Copy Citation Text

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