[1] Shi-chun Zhou. Introduction to Advanced Infrared Optoelectronic Engineering(2014).

[2] Xue-chu Shen. Optical properties of semiconductors, 44-117,(1992).

[3] Jian-rong Yang. Material Physics and Technology of Mercury Cadmium Telluride, 11-29,(2012).

[4] W E Tennant, J M Arias, J Bajaj. HgCdTe at Teledyne. Proceedings of SPIE-The International Society for Optical Engineering, 7298(2009).

[5] J M Arias, J G Pasko, M Zandian et al. MBE HgCdTe heterostructure p-on-n planar infrared photodiodes. Journal of Electronic Materials, 22, 1049-1053(1993).

[6] L Mollard, G Destefanis, N Baier et al. Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation. Journal of Electronic Materials, 38, 1805-1813(2009).

[7] N Baier, L Mollard, O Gravrand et al. MCT planar p-on-n LW and VLW IRFPAs. Proceedings of Spie the International Society for Optical Engineering, 8704(2013).

[8] L Mollard, G Destefanis, J Rothman et al. HgCdTe FPAs made by arsenic-ion implantation. Proceedings of SPIE - The International Society for Optical Engineering(2008).

[9] P Bensussan, P Tribolet, G Destéfanis et al. Fifty years of successful MCT research and production in France. Proc Spie, 7298, 72982N-72982N-31(2009).

[10] B Fieque, P Chorier, A Lamoure et al. Status of space activity and science detectors development at Sofradir(2019).

[11] Y Reibel, A Rouvie, A Nedelcu et al. Large format, small pixel pitch and hot detectors at SOFRADIR(2013).

[12] N Baier, C Cervera, O Gravrand et al. Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on-n HgCdTe. Journal of Elec Materi, 44, 1-7(2015).

[13] W E Tennant, D Lee, M Zandian et al. MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by "Rule 07", a Very Convenient Heuristic. Journal of Electronic Materials, 37, 1406-1410(2008).

[14] R Dewames, P Maloney, C Billman et al. Electro-optical characteristics of a MWIR and LWIR planar hetero-structure P+n HgCdTe photodiodes limited by intrinsic carrier recombination processes. Proceedings of SPIE - The International Society for Optical Engineering, 8012, 546-550(2011).

[15] S Simingalam, B L Vanmil, Y Chen et al. Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy. Solid State Electronics, 101, 90-94(2014).

[16] C Wang, S Tobin, T Parodos et al. Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy. Journal of Electronic Materials, 35, 1192-1196(2006).

[17] J Rutkowski, P Madejczyk, W Gawron et al. Buried Long-Wavelength Infrared HgCdTe P-on-n Heterojunctions, 772, 1557(2005).

[18] A G Korotaev, I I Izhnin, K D Mynbaev et al. Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing. Surface and Coatings Technology, 393, 125721(2020).

[19] I I Izhnin, K D Mynbaev, Z Swiatek et al. Direct comparison of the results of arsenic ion implantation in n–and p–type Hg0.8Cd0.2Te. Infrared Physics & Technology, 109, 103388(2020).

[20] Bo-liang Chen, Xiang-yang Li. Space infrared imaging detector, 12-63,(2016).